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We have analyzed the photoreflectance spectra of a GaInP/GaInAs/Ge triple junction solar cell. The spectra reveal signatures from the window layer and middle and top subcells included in the stack. Additional contributions from the multilayer buffer introduced between the mismatched bottom and middle cells have been detected. Franz–Keldysh oscillations (FKOs) dominate the spectra above the fundamental bandgaps of the GaInP and GaInAs absorbers. From the FKO analysis, we have estimated the dominant electric fields within each subcell. In light of these results, photoreflectance is proposed as a useful diagnostic tool for quality assessment of multijunction structures prior to completion of the device or at earlier stages during its processing.

The project FULLSPECTRUM — an Integrated Project (IP) in the terminology of the European Commission — pursues a better exploitation of the FULL solar SPECTRUM by (1) further developing concepts already scientifically proven but not yet developed and (2) by trying to prove new ones in the search for a breakthrough in photovoltaic (PV) technology. More specific objectives are the development of: (a) III–V multijunction cells (MJC), (b) solar thermo-photovoltaic (TPV) converters, (c) intermediate band (IB) materials and cells (IBC), (d) molecular-based concepts (MBC) for full PV utilisation of the solar spectrum and (e) manufacturing technologies (MFG) for novel concepts including assembling. MJC technology towards 40% efficiency will be developed using lower cost substrates and high light concentration (up or above 1000 suns). TPV is a concept with a theoretically high efficiency limit because the entire energy of all the photons is used in the heating process and because the non-used photons can be fed back to the emitter, therefore helping in keeping it hot. In the IBC approach, sub-bandgap photons are exploited by means of an IB. Specific IB materials will be sought by direct synthesis suggested by material-band calculations and using nanotechnology in quantum dot (QD) IBCs. In the development of the MBC, topics such as the development of two-photon dye cells and the development of a static global (direct and diffuse) light concentrator by means of luminescent multicolour dyes and QDs, with the radiation confined by photonic crystals, will be particularly addressed. MFG include optoelectronic assembling techniques and coupling of light to cells with new-optic miniconcentrators.

Nanostructured chalcopyrite compounds have recently been proposed as absorber materials for advanced photovoltaic devices. We have used photoreflectance (PR) to evaluate the impact of interdiffusion phenomena and the presence of native defects on the optoelectronic properties of such materials. Two model material systems have been analyzed: (i) thin layers of CuGaSe2 (Eg=1.7 eV) and CuInSe2 (1.0 eV) in a wide/low/wide bandgap stack that have been grown onto GaAs(0 0 1) substrates by metalorganic chemical vapor deposition (MOCVD); and (ii) thin In2S3 samples (Eg=2.0 eV) containing small amounts of Cu that have been grown by co-evaporation (PVD) intending to form CuxInySz (Eg1.5 eV) nanoclusters into the In2S3 matrix. The results have been analyzed according to the third-derivative functional form (TDFF). The valence band structure of selenide reference samples could be resolved and uneven interdiffusion of Ga and In in the layer stack could be inferred from the shift of PR-signatures. Hints of electronic confinement associated to the transitions at the low-gap region have been found in the selenide layer stack. Regarding the sulphide system, In2S3 is characterized by the presence of native deep states, as revealed by PR. The defect structure of the compound undergoes changes when incorporating Cu and no conclusive result about the presence of ternary clusters of a distinct phase could be drawn. Interdiffusion phenomena and the presence of native defects in chalcopyrites and related compounds will determine their potential use in advanced photovoltaic devices based on nanostructures.