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Silicon has long been established as the material of choice for the microelectronics industry. This is not yet true in photonics, where the limited degrees of freedom in material design combined with the indirect bandgap are a major constraint. Recent developments, especially those enabled by nanoscale engineering of the electronic and photonic properties, are starting to change the picture, and some silicon nanostructures now approach or even exceed the performance of equivalent direct-bandgap materials. Focusing on two application areas, namely communications and photovoltaics, we review recent progress in silicon nanocrystals, nanowires and photonic crystals as key examples of functional nanostructures. We assess the state of the art in each field and highlight the challenges that need to be overcome to make silicon a truly high-performing photonic material.

Dispersed transient absorption spectra collected at variable excitation intensities in combination with time-resolved signals were used to explore the underlying connectivity of the electronic excited-state manifold of the carotenoid rhodopin glucoside in the light-harvesting 2 complex isolated from Rhodopseudomonas acidophila. We find that the S state, which was recently identified as an excited state in carotenoids bound in bacterial light-harvesting complexes, exhibits a different response to the increase of excitation intensity than the S(1) state, which suggests that the models used so far to describe the excited states of carotenoids are incomplete. We propose two new models that can describe both the time-resolved and the intensity-dependent data; the first postulates that S(1) and S* are not populated in parallel after the decay of the initially excited S(2) state but instead result from the excitation of distinct ground-state subpopulations. The second model introduces a resonantly enhanced light-induced transition during excitation, which promotes population to higher-lying excited states that favors the formation of S* over S(1). Multiwavelength target analysis of the time-resolved and excitation-intensity dependence measurements were used to characterize the involved states and their responses. We show that both proposed models adequately fit the measured data, although it is not possible to determine which model is most apt. The physical origins and implications of both models are explored.

CSP (Concentrated Solar Power) plants technologies use the concentration of solar energy on a receiver to produce heat and then electricity by a thermodynamical process. A solar absorber material is used to convert the energy carried by light into heat. This type of material works at high temperatures (up to 1000 °C) under a highly concentrated solar flux (up to x1000 or more). Optical properties determine the performance of absorbers and it is thus necessary to measure their spectral absorptance and emittance. Solar absorptance is directly linked to the capacity of the absorber material to convert the solar flux into heat. Emittance drives the radiative thermal losses for the heated absorber and depends on the absorber temperature. The characterization of a material in operational conditions at high temperatures requires advanced apparatuses, and different measurement methods exist for the characterization of these two quantities of relevance regarding an absorber. A Round Robin Test (RRT) was conducted with the objective of comparing different new optical apparatuses and methods for measuring the emittance or luminance of various solar absorbers in air. Measurements were carried out directly at temperatures up to 560 °C while heating the samples, and also indirectly by hemispherical reflectance measurements at room temperature. In this paper, the Round Robin Test procedure to compare apparatuses is described, as well as the corresponding reflectance and emittance results on four types of materials. In addition, a discussion of some factors of influence over high temperature measurements in air and of the observed discrepancies among results from the evaluators is presented. The reliability of reflectance/emittance measurements is also demonstrated and statistics of deviations from the mean value are analysed. These allow us to infer information about measurement reproducibility. The reflectance spectra of all samples after high temperature measurements in air (up to 500 °C) do not show any significant changes.

This work had partial financial support of the Portuguese Foundation for Science and Technology (FCT) under the Strategic Project for the Centre of Territory, Environment and Construction of the School of Engineering, University of Minho, Portugal. The Cluster computing facilities are provided by the Project ‘Search-ON2: Revitalisation of HPC infrastructure of UMinho’ (NORTE-07-0162-FEDER-000086), co-funded by the North Portugal Regional Operational Programme (ON.2 – O Novo Norte), under the National Strategic Reference Framework (NSRF), through the European Regional Development Fund (ERDF). We also would like to thank the two anonymous reviewers.

AbstractMonolithic tandem cells involving a top cell with Si nanocrystals embedded in SiC (Si NC/SiC) and a c‐Si bottom cell have been prepared. Scanning electron microscopy shows that the intended cell architecture is achieved and that it survives the 1100 °C anneal required to form Si NCs. The cells exhibit mean open‐circuit voltages Voc of 900–950 mV, demonstrating tandem cell functionality, with ≤580 mV arising from the c‐Si bottom cell and ≥320 mV arising from the Si NC/SiC top cell. The cells are successfully connected using a SiC/Si tunnelling recombination junction that results in very little voltage loss. The short‐circuit current densities jsc are, at 0.8–0.9 mAcm−2, rather low and found to be limited by current collection in the top cell. However, equivalent circuit simulations demonstrate that in current‐mismatched tandem cells such as the ones studied here, higher jsc, when accompanied by decreased Voc, can arise from shunts or breakdown in the limiting cell rather than improved current collection from the limiting cell. This indicates that Voc is a better optimisation parameter than jsc for tandem cells where the limiting cell exhibits poor junction characteristics. The high‐temperature‐stable cell architecture developed in this work, coupled with simulations highlighting potential pitfalls in tandem cell analysis, provides a suitable route for optimisation of Si NC layers for photovoltaics on a tandem cell device level. Copyright © 2016 John Wiley & Sons, Ltd.

Abstract A novel approach to the oxidation mechanism of near-stoichiometric TiC is presented. It is confirmed by consideration of solid-state chemical kinetics model and electron microscopy observations in parallel. At low oxygen pressures and moderate temperatures the initial step of the process is connected with the dissolution of oxygen and subsequent decomposition of oxygen-oversaturated oxycarbide, which ultimately results in the nucleation of oxide phase, in particular anatase, belike stabilised by residual carbon. An anatase–rutile transformation is concurrent with deeper carbon burn-off in the oxide scale, which sinters at higher temperatures. This mechanism shifts the process to a gas diffusion regime, governed by the scale permeability, but determined by solid-state diffusion that is reflected in the kinetics, as further temperature increase is accompanied by a decrease of the oxidation rate, so in general the process is characterised by the negative value of apparent activation energy.

Abstract—A new polarized backlight system for liquid‐crystal displays (LCDs) is presented in which one linear polarization is preferentially coupled out by anisotropic scattering. The lightguide consists of a polymeric polarization‐dependent scattering film adhered to a transparent polymeric substrate. By changing the scattering power of the film, the polarized light outcoupling angles can be influenced and optimized to achieve a maximum outcoupling centered along the normal direction. The other linear polarization is mainly trapped in the lightguide and is shown to be recycled to enhance the overall light and/or energy efficiency. With a proper substrate choice, the achieved local contrast exceeds 14 over a 50‐mm range. A collimated light input further enhances the polarized contrast to well over 17.