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AbstractIn this work three-dimensional (3-D) numerical simulations, validated by the experimental measurements of a reference cell, have been performed to optimize the rear contact geometry of a PERC-type solar cell, featuring a high sheet resistance (140Ω/sq) phosphorus-doped emitter and a front-side metallization with narrow and highly-conductive electro-plated copper lines (40μm wide) on lowly resistive Ti contacts. The simulation results show that an optimization of the rear point contact design potentially leads to an efficiency improvement of 0.68%abs compared to the reference cell.

AbstractIn this work three-dimensional (3-D) numerical simulations, validated by the experimental measurements of a reference cell, have been performed to optimize the rear contact geometry of a PERC-type solar cell, featuring a high sheet resistance (140Ω/sq) phosphorus-doped emitter and a front-side metallization with narrow and highly-conductive electro-plated copper lines (40μm wide) on lowly resistive Ti contacts. The simulation results show that an optimization of the rear point contact design potentially leads to an efficiency improvement of 0.68%abs compared to the reference cell.

AbstractIn this paper we introduce a quasi 3-D electrical model for a high efficiency interdigitated back contact (IBC) solar cell. This distributed electrical network is based on two-diodes circuit elementary units. It allows accounting for the resistive losses due to the transport through the emitter, the back surface field (BSF) and the fingers and busbars metallization. Moreover, it can model the electrical shading losses attributed to the BSF busbar. We calibrated the electrical components of the model according to experimental measurements on real devices. The validity of the model is demonstrated by the good agreement between simulation and experimental results for dark and illuminated IV measurements with and without masked busbars. The model can now easily be applied to simulate and optimize different metal grid layouts.

AbstractIn this paper we introduce a quasi 3-D electrical model for a high efficiency interdigitated back contact (IBC) solar cell. This distributed electrical network is based on two-diodes circuit elementary units. It allows accounting for the resistive losses due to the transport through the emitter, the back surface field (BSF) and the fingers and busbars metallization. Moreover, it can model the electrical shading losses attributed to the BSF busbar. We calibrated the electrical components of the model according to experimental measurements on real devices. The validity of the model is demonstrated by the good agreement between simulation and experimental results for dark and illuminated IV measurements with and without masked busbars. The model can now easily be applied to simulate and optimize different metal grid layouts.