• Energy Research
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The Silicon on Dust Substrate (SDS) is a gas-to-wafer process that produces multicrystalline silicon ribbons directly from gaseous feedstock (silane), avoiding the standard industry steps of polysilicon deposition, crystal growth, and wafering. The SDS technique consists of three main steps: (i) micrometric-sized silicon powder production by grinding silicon chunks; (ii) chemical vapor deposition (CVD) of silicon over this silicon powder substrate; and (iii) zone-melting recrystallization (ZMR) of the nanocrystalline pre-ribbon obtained in the CVD step. Several samples were produced by this technique. During CVD, mechanically self-sustained nanocrystalline pre-ribbons were grown over silicon powder substrates, with growth rates in the order of 50 µm/min. The ZMR process performance is substantially impacted by the pre-ribbon physical characteristics. The best and largest recrystallizations were achieved on pre-ribbons grown over powder substrates with smaller particle sizes, which also have lower substrate powder incorporation ratios. Multicrystalline silicon ribbons with crystalline areas as large as 2 × 4 cm2 were successfully produced. These areas have visible columnar crystal growth with crystal lengths up to 1 cm. The SDS ribbons’ measured resistivity confirmed the high powder content of the resulting material. The ability to produce solar cells on SDS multicrystalline silicon ribbons was demonstrated.

AbstractThis manuscript describes and presents results obtained with an inline optical CVD system operating at low temperature (10mm/min) compressed silicon powder substrate. The deposition parameters, together with the silicon powder substrate feature, provide a solution for a contamination free layer to be detached and used as a pre-ribbon for solar cell formation. 15cm long nanocrystalline silicon pre-ribbon samples were grown at a speed of 10mm/min with depositionrates up to 90μm/min.