• Energy Research

In this study we analysed halide perovskite films deposited directly on crystalline silicon by means of two set-ups using different operating modes of the surface photovoltage (SPV) methods, i.e., the Kelvin probe force microscopy (KPFM) and the metal-insulator-semiconductor (MIS) technique. The KPFM allowed to visualize surface potential distribution on a microscale while MIS technique allowed to study SPV spectral dependence. We studied wavelength dependent SPV of these samples, which allowed us to effectively vary the probe depth in the sample and discern the contribution from each interface to the overall effect measured under white light illumination. Depending on where the photocarriers are generated, different SPV signals are observed: at the perovskite/Si interface, the signal depends on Si doping type, while at the surface the SPV is always negative indicating downward surface band bending. This is confirmed by analysing SPV phase measured in the AC MIS mode. In addition, distinction between slow and fast processes contributing to measured SPV was possible. It has been observed, that with decreasing the illumination wavelength, the processes causing SPV become slower, which can indicate that high energy photons not only generate electronic photocarriers but can also induce chemical changes with creation of defects or ionic species that also modify the measured SPV.

Fretting remains a major cause of connector failure and can impair reliability in complex systems. Oxidizable metals such as tin, copper and nickel are particularly prone to fretting degradation. We report here the first results of an investigation on fretting of nickel contacts with two types of deposits. Sulfate nickel layers are electrodeposited in different conditions and show very different behaviours during fretting tests. The characteristics of the layers are analyzed and show different compositions and microstructures. The compositions are measured by X-Ray Photoelectron Spectroscopy (XPS) which allows determining the chemical nature of the compounds formed during exposure to air. Topography is measured by AFM and the roughness and grain characteristics are assessed. Electrical properties at the micro/nanoscale are measured with the CP-AFM technique. Various loads are applied to the cantilever beam; the electrical characterization is performed versus the load. The results of fretting experiments are analyzed in terms of fretting regimes. The fretting regimes occurring during the test of the matte layers involve partial slip which delays the occurrence of contact resistance (Rc) increase. Gross slip in the interface is shown to create very poorly conducting wear debris leading to drastic increase of Rc. This study is part of a larger one aiming at tailoring coatings allowing the best tribological and electrical behaviors during fretting of nickel contacts.

Due to its electrical and optical interesting properties, InGaN alloy is being intensively studied to be combined with silicon in order to achieve low-cost high-efficiency solar cell. However, a relatively thick monophasic layer of InGaN is difficult to grow due to the relaxation issue in material. This issue can be avoided by semibulk structure. In this work, we present an InGaN/Si double-junction solar cell modeled using Silvaco-ATLAS TCAD software. We have taken into account polarization effect in III-N materials. We have shown that 50% of indium is needed to ensure the current matching between the top cell and the bottom cell in 2-terminal configuration. Such high indium composition is technologically challenging to grow. Thus, we have modeled a 4-terminals solar cell with relatively low indium composition (In = 25%) where current matching is not needed. With technologically feasible structural parameters, we have shown that an efficiency near to 30% can be achieved with InGaN/Si 4-contact tandem cell.