• Energy Research

AbstractHot carrier solar cells promise theoretical power conversion efficiencies far beyond the single junction limit. However, practical implementations of hot carrier solar cells have lagged far behind those theoretical predictions. Reciprocity relations for electroluminescence from conventional single junction solar cells have been extremely helpful in driving their efficiency ever closer to the theoretical limits. In this work, we discuss how the signatures of a functioning hot carrier device should manifest experimentally when driven in reverse, that is, in electroluminescent mode. Hot carrier properties lead to deviations of the dark I–V from the Shockley diode equation that is typical for conventional single junction solar cells. These deviations are directly linked to an increase in temperature of the carriers and therefore the temperature measured from electroluminescence spectra. We also elucidate how the behaviour of hot carrier solar cells in the dark depends on whether Auger processes play a significant role, revealing a stark contrast between the regime of negligible Auger recombination (carrier conservation model) and dominant Auger recombination (impact ionisation model) for hot carrier solar cells.

A thermoradiative diode is a device that can generate power through thermal emission from the warm Earth to the cold night sky. Accurate assessment of the potential power output requires knowledge of the downwelling radiation from the atmosphere. Here, accurate modeling of this radiation is used alongside a detailed balance model of a diode at the Earth's surface temperature to evaluate its performance under nine different atmospheric conditions. In the radiative limit, these conditions yield power densities between 0.34 and 6.5 W.m-2, with optimal bandgaps near 0.094 eV. Restricting the angles of emission and absorption to less than a full hemisphere can marginally increase the power output. Accounting for non-radiative processes, we suggest that if a 0.094 eV device would have radiative efficiencies more than two orders of magnitude lower than a diode with a bandgap near 0.25 eV, the higher bandgap material is preferred.

AbstractThe economic value of a photovoltaic installation depends upon both its lifespan and power conversion efficiency. Progress toward the latter includes mechanisms to circumvent the Shockley‐Queisser limit, such as tandem designs and multiple exciton generation (MEG). Here we explain how both silicon tandem and MEG‐enhanced silicon cell architectures result in lower cell operating temperatures, increasing the device lifetime compared to standard c‐Si cells. Also demonstrated are further advantages from MEG enhanced silicon cells: (i) the device architecture can completely circumvent the need for current‐matching; and (ii) upon degradation, tetracene, a candidate singlet fission (a form of MEG) material, is transparent to the solar spectrum. The combination of (i) and (ii) mean that the primary silicon device will continue to operate with reasonable efficiency even if the singlet fission layer degrades. The lifespan advantages of singlet fission enhanced silicon cells, from a module perspective, are compared favorably alongside the highly regarded perovskite/silicon tandem and conventional c‐Si modules.

Bulk lifetime (\tau {\text{bulk}}) and bulk doping (N{\text{dop}}) are critical material parameters influencing solar cell performance. The ability to probe spatial variations in \tau {\text{bulk}} and N{\text{dop}} in ingots, prior to wafer cutting and further processing, would be beneficial to improving the yield and reducing the cost of silicon solar cells. This study demonstrates the capability of the two-photon time-resolved photoluminescence decay method to determine both \tau {\text{bulk}} and N{\text{dop}} in thick crystalline silicon samples. The use of two photon excitation enables a more uniform carrier generation profile compared to conventional single-photon excitation, making measurements less sensitive to surface effects. The method is verified using an unpassivated n-type Czochralski silicon disk and found to be in good agreement with the results obtained from the photoluminescence ratio imaging method.