• Energy Research

We investigated the solid state reaction of 30-nm and 100-nm-thick silicide layers on single-crystalline silicon in the temperature range between 650 and 800°C using transmission electron microscopy and atomic force microscopy. Sheet resistance measurements were used to observe the effect of the reaction temperature on the layer properties and to perform a systematic study on the thermal stability. At the lower reaction temperature good quality layers were produced with quite small grains. The specific resistivity is as low as 15 μΩ cm and the interface to the silicon substrate is quite flat. These favourable properties lead to a high thermal stability. The processed layers are stable in the temperature range between 850 and 950°C. When the layer thickness is increased to 100 nm, the stability range extends by about 250°C. The deterioration rate of 30-nm and 100-nm-thick silicide layers was deduced from sheet resistance measurements. The activation energy for the electrical degradation of the layer due to layer agglomeration was found to be nearly independent of the thickness.