• Energy Research

A theoretical and experimental study of a conventional boost converter is presented. Based on the real behavior of the components, the conventional boost converter model dealing with both inductive and capacitive losses as well as switching losses is introduced. From this model, the detailed analytical expressions of the voltage gain factor and the conversion efficiency are established taking into account the losses due to parasitic resistances and switching losses. The behavior of the converter is then analyzed by simulating the voltage gain factor and the conversion efficiency as a function of the duty cycle. The converter prototype was manufactured and a set of experimental measurements was made; these measurements made it possible to demonstrate that the proposed theoretical models were reliable for a large range of duty cycle for the boost converter.

A theoretical study of a conventional boost converter is presented. Based on the real behavior of the components, two models of the boost converter are introduced: one dealing only with losses through inductor and capacitor and another taking into account switching losses in addition to resistive ones. From these two models, the detailed analytical expressions of both voltage gain factor and conversion efficiency are established taking into account the losses through parasitic resistances and switching losses. The behavior of the converter is then analyzed for each model by simulation for the voltage gain factor and the conversion efficiency.

This paper investigates theoretically the behavior of the space charge region of a silicon solar cell and its associated capacitance under the effect of an external electric field. The purpose of this work is to show that under illumination the solar cell’s space charge region width varies with both operating point and the external induced electric field and how the solar cell capacitance varies with the space charge region width. Based on a 1D modelling of the quasi-neutral p-base, the space charge region width is determined and the associated capacitance is calculated taking into account the external electric field and the junction dynamic velocity. Based on the above calculations and simulations conducted with Mathcad, we confirmed the linear dependence of the inverse capacitance with space charge region width for thin space charge region and we exhibit an exponential dependence for large space charge region.