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description Publicationkeyboard_double_arrow_right Article , Journal 2019Publisher:Institute of Electrical and Electronics Engineers (IEEE) Utkarshaa Varshney; Malcolm Abbott; Alison Ciesla; Daniel Chen; Shaoyang Liu; Chandany Sen; Moonyong Kim; Stuart Wenham; Bram Hoex; Catherine Chan;There has been continuous effort to understand the cause of light- and elevated-temperature-induced degradation (LeTID) in silicon solar cells; however, the actual origin of the defect is still under investigation. Multiple reports in the literature suggest the involvement of hydrogen in activating the recombination-active defect that is responsible for this degradation. In this paper, we investigate the influence of the amount of in-diffused hydrogen in the bulk on the degradation in silicon lifetime test structures. We examine this by varying the thickness of hydrogenated silicon nitride (SiNx:H) before high-temperature firing. Fourier transform infrared spectroscopy is performed to confirm that the hydrogen content in SiNx:H film scales with its thickness. We observe that an increase in the thickness of hydrogen-rich SiNx:H leads to an almost proportional increase in the extent of defect concentration in multicrystalline silicon wafers. We attribute this increase to the higher amount of hydrogen released from thicker SiNx:H layers into the bulk during firing. This paper provides further evidence for the involvement of hydrogen in the formation of the LeTID defect in silicon.
IEEE Journal of Phot... arrow_drop_down IEEE Journal of PhotovoltaicsArticle . 2019 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2019.2896671&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eu41 citations 41 popularity Top 10% influence Top 10% impulse Top 10% Powered by BIP!
more_vert IEEE Journal of Phot... arrow_drop_down IEEE Journal of PhotovoltaicsArticle . 2019 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2019.2896671&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eudescription Publicationkeyboard_double_arrow_right Article , Journal 2021Publisher:Institute of Electrical and Electronics Engineers (IEEE) Funded by:ARC | Discovery Early Career Re...ARC| Discovery Early Career Researcher Award - Grant ID: DE170100620Utkarshaa Varshney; Moonyong Kim; Muhammad Umair Khan; Phillip Hamer; Catherine Chan; Malcolm Abbott; Bram Hoex;Light and elevated-temperature-induced degradation (LeTID) is a well-known phenomenon that reduces the bulk lifetime in silicon wafers. The cause of this degradation mechanism is still under investigation. However, a wide range of empirical trends that correlate LeTID with multiple physical and processing parameters have been reported, including the observation that wafers thinner than 120 μm do not show significant LeTID. In this work, we extend that study by varying the thickness of the wafers, the temperature of the firing step, and testing LeTID at the accelerated stability testing conditions. We demonstrate that the extent of degradation reduces with the thickness of the wafer, in agreement with the earlier work. However, silicon wafers with a thickness below 120 μm still suffer from LeTID when fired at sufficiently high temperatures, demonstrating that thinner wafers are not inherently immune to LeTID. By performing accelerated testing using a high-intensity laser and fitting the degradation and regeneration data, we observe that thinner wafers do not necessarily exhibit a faster recovery, as suggested earlier. However, their reduced degradation extent could be a consequence of relatively higher out-diffusion of hydrogen per unit volume in thinner wafers during firing. We further report that the method used for thinning the wafers results in a variation in the surface morphology of the samples, and that may partly be responsible for the observed correlation between the thickness of the wafers and LeTID extent. Finally, we discuss how these new findings can be explained by the involvement of hydrogen and other impurities in LeTID.
IEEE Journal of Phot... arrow_drop_down IEEE Journal of PhotovoltaicsArticle . 2021 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2020.3038412&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eu11 citations 11 popularity Top 10% influence Average impulse Top 10% Powered by BIP!
more_vert IEEE Journal of Phot... arrow_drop_down IEEE Journal of PhotovoltaicsArticle . 2021 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2020.3038412&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eudescription Publicationkeyboard_double_arrow_right Article , Journal 2020 AustraliaPublisher:Institute of Electrical and Electronics Engineers (IEEE) Funded by:ARC | Discovery Early Career Re...ARC| Discovery Early Career Researcher Award - Grant ID: DE170100620Varshney, U; Chan, C; Hoex, B; Hallam, B; Hamer, P; Ciesla, A; Chen, D; Liu, S; Sen, C; Samadi, A; Abbott, M;handle: 1959.4/unsworks_65333
In this article, we investigate the extent of lifetime degradation attributed to light- and elevated-temperature-induced degradation (LeTID) in p- type multicrystalline silicon wafers passivated with different configurations of hydrogenated silicon nitride (SiNx:H) and aluminum oxide (AlOx:H). We also demonstrate a significant difference between AlOx:H layers grown by atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) with respect to the extent of LeTID. When ALD AlOx:H is placed underneath a PECVD SiNx:H layer, as used in a passivated emitter and rear solar cell, a lower extent of LeTID is observed compared with the case when a single PECVD SiNx:H layer is used. On the other hand, the LeTID extent is significantly increased when an ALD AlOx:H is grown on top of the PECVD SiNx:H film. Remarkably, when a PECVD AlOx:H is used underneath the PECVD SiNx:H film, an increase in the LeTID extent is observed. Building on our current understanding of LeTID, we explain these results with the role of ALD AlOx:H in impeding the hydrogen diffusion from the dielectric stack into the c-Si bulk, while PECVD AlOx:H seems to act as an additional hydrogen source. These observations support the hypothesis that hydrogen is playing a key role in LeTID and provide solar cell manufacturers with a new method to reduce LeTID in their solar cells.
UNSWorks arrow_drop_down UNSWorksArticle . 2020License: CC BY NC NDFull-Text: http://hdl.handle.net/1959.4/unsworks_65333Data sources: Bielefeld Academic Search Engine (BASE)IEEE Journal of PhotovoltaicsArticle . 2020 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2019.2945199&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.euAccess RoutesGreen 26 citations 26 popularity Top 10% influence Top 10% impulse Top 10% Powered by BIP!
more_vert UNSWorks arrow_drop_down UNSWorksArticle . 2020License: CC BY NC NDFull-Text: http://hdl.handle.net/1959.4/unsworks_65333Data sources: Bielefeld Academic Search Engine (BASE)IEEE Journal of PhotovoltaicsArticle . 2020 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2019.2945199&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eudescription Publicationkeyboard_double_arrow_right Article , Journal 2021Publisher:Institute of Electrical and Electronics Engineers (IEEE) Sahar Jafari; Utkarshaa Varshney; Bram Hoex; Sylke Meyer; Dominik Lausch;Hydrogen has been long known for its ability to passivate defects in silicon devices. However, multiple recent studies on understanding the mechanism behind light- and elevated temperature-induced degradation (LeTID) have proposed that hydrogen plays an important role in this degradation mechanism. Despite its important role in photovoltaic applications, the quantitative assessment of hydrogen is difficult and seldom reported. In this work, we applied hydrogen effusion mass spectroscopy to quantify the hydrogen released from hydrogenated silicon nitride (SiNx:H) and atomic layer deposited (ALD) aluminum oxide (AlOx) dielectric films at elevated temperatures. We demonstrate that the amount of hydrogen effused from these layers strongly correlates with the extent of LeTID observed in the multicrystalline silicon wafers passivated with these monolayers and their stacks. It is shown that the hydrogen effusion scales linearly with the SiNx:H thickness, similar as the extent of LeTID. The effusion measurements on the AlOx/SiNx:H stack revealed that the presence of the AlOx film modifies the total amount of hydrogen that is effused, whereas it was found to slow the hydrogen in-diffusion. This result is consistent with the LeTID extent determined after contact firing where ALD AlOx layers were found to act as a hydrogen diffusion barrier, strongly reducing LeTID when placed in between c-Si and SiNx:H and increasing LeTID when placed on top of SiNx:H.
IEEE Journal of Phot... arrow_drop_down IEEE Journal of PhotovoltaicsArticle . 2021 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2021.3104194&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eu9 citations 9 popularity Top 10% influence Average impulse Top 10% Powered by BIP!
more_vert IEEE Journal of Phot... arrow_drop_down IEEE Journal of PhotovoltaicsArticle . 2021 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2021.3104194&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eu
description Publicationkeyboard_double_arrow_right Article , Journal 2019Publisher:Institute of Electrical and Electronics Engineers (IEEE) Utkarshaa Varshney; Malcolm Abbott; Alison Ciesla; Daniel Chen; Shaoyang Liu; Chandany Sen; Moonyong Kim; Stuart Wenham; Bram Hoex; Catherine Chan;There has been continuous effort to understand the cause of light- and elevated-temperature-induced degradation (LeTID) in silicon solar cells; however, the actual origin of the defect is still under investigation. Multiple reports in the literature suggest the involvement of hydrogen in activating the recombination-active defect that is responsible for this degradation. In this paper, we investigate the influence of the amount of in-diffused hydrogen in the bulk on the degradation in silicon lifetime test structures. We examine this by varying the thickness of hydrogenated silicon nitride (SiNx:H) before high-temperature firing. Fourier transform infrared spectroscopy is performed to confirm that the hydrogen content in SiNx:H film scales with its thickness. We observe that an increase in the thickness of hydrogen-rich SiNx:H leads to an almost proportional increase in the extent of defect concentration in multicrystalline silicon wafers. We attribute this increase to the higher amount of hydrogen released from thicker SiNx:H layers into the bulk during firing. This paper provides further evidence for the involvement of hydrogen in the formation of the LeTID defect in silicon.
IEEE Journal of Phot... arrow_drop_down IEEE Journal of PhotovoltaicsArticle . 2019 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2019.2896671&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eu41 citations 41 popularity Top 10% influence Top 10% impulse Top 10% Powered by BIP!
more_vert IEEE Journal of Phot... arrow_drop_down IEEE Journal of PhotovoltaicsArticle . 2019 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2019.2896671&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eudescription Publicationkeyboard_double_arrow_right Article , Journal 2021Publisher:Institute of Electrical and Electronics Engineers (IEEE) Funded by:ARC | Discovery Early Career Re...ARC| Discovery Early Career Researcher Award - Grant ID: DE170100620Utkarshaa Varshney; Moonyong Kim; Muhammad Umair Khan; Phillip Hamer; Catherine Chan; Malcolm Abbott; Bram Hoex;Light and elevated-temperature-induced degradation (LeTID) is a well-known phenomenon that reduces the bulk lifetime in silicon wafers. The cause of this degradation mechanism is still under investigation. However, a wide range of empirical trends that correlate LeTID with multiple physical and processing parameters have been reported, including the observation that wafers thinner than 120 μm do not show significant LeTID. In this work, we extend that study by varying the thickness of the wafers, the temperature of the firing step, and testing LeTID at the accelerated stability testing conditions. We demonstrate that the extent of degradation reduces with the thickness of the wafer, in agreement with the earlier work. However, silicon wafers with a thickness below 120 μm still suffer from LeTID when fired at sufficiently high temperatures, demonstrating that thinner wafers are not inherently immune to LeTID. By performing accelerated testing using a high-intensity laser and fitting the degradation and regeneration data, we observe that thinner wafers do not necessarily exhibit a faster recovery, as suggested earlier. However, their reduced degradation extent could be a consequence of relatively higher out-diffusion of hydrogen per unit volume in thinner wafers during firing. We further report that the method used for thinning the wafers results in a variation in the surface morphology of the samples, and that may partly be responsible for the observed correlation between the thickness of the wafers and LeTID extent. Finally, we discuss how these new findings can be explained by the involvement of hydrogen and other impurities in LeTID.
IEEE Journal of Phot... arrow_drop_down IEEE Journal of PhotovoltaicsArticle . 2021 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2020.3038412&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eu11 citations 11 popularity Top 10% influence Average impulse Top 10% Powered by BIP!
more_vert IEEE Journal of Phot... arrow_drop_down IEEE Journal of PhotovoltaicsArticle . 2021 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2020.3038412&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eudescription Publicationkeyboard_double_arrow_right Article , Journal 2020 AustraliaPublisher:Institute of Electrical and Electronics Engineers (IEEE) Funded by:ARC | Discovery Early Career Re...ARC| Discovery Early Career Researcher Award - Grant ID: DE170100620Varshney, U; Chan, C; Hoex, B; Hallam, B; Hamer, P; Ciesla, A; Chen, D; Liu, S; Sen, C; Samadi, A; Abbott, M;handle: 1959.4/unsworks_65333
In this article, we investigate the extent of lifetime degradation attributed to light- and elevated-temperature-induced degradation (LeTID) in p- type multicrystalline silicon wafers passivated with different configurations of hydrogenated silicon nitride (SiNx:H) and aluminum oxide (AlOx:H). We also demonstrate a significant difference between AlOx:H layers grown by atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) with respect to the extent of LeTID. When ALD AlOx:H is placed underneath a PECVD SiNx:H layer, as used in a passivated emitter and rear solar cell, a lower extent of LeTID is observed compared with the case when a single PECVD SiNx:H layer is used. On the other hand, the LeTID extent is significantly increased when an ALD AlOx:H is grown on top of the PECVD SiNx:H film. Remarkably, when a PECVD AlOx:H is used underneath the PECVD SiNx:H film, an increase in the LeTID extent is observed. Building on our current understanding of LeTID, we explain these results with the role of ALD AlOx:H in impeding the hydrogen diffusion from the dielectric stack into the c-Si bulk, while PECVD AlOx:H seems to act as an additional hydrogen source. These observations support the hypothesis that hydrogen is playing a key role in LeTID and provide solar cell manufacturers with a new method to reduce LeTID in their solar cells.
UNSWorks arrow_drop_down UNSWorksArticle . 2020License: CC BY NC NDFull-Text: http://hdl.handle.net/1959.4/unsworks_65333Data sources: Bielefeld Academic Search Engine (BASE)IEEE Journal of PhotovoltaicsArticle . 2020 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2019.2945199&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.euAccess RoutesGreen 26 citations 26 popularity Top 10% influence Top 10% impulse Top 10% Powered by BIP!
more_vert UNSWorks arrow_drop_down UNSWorksArticle . 2020License: CC BY NC NDFull-Text: http://hdl.handle.net/1959.4/unsworks_65333Data sources: Bielefeld Academic Search Engine (BASE)IEEE Journal of PhotovoltaicsArticle . 2020 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2019.2945199&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eudescription Publicationkeyboard_double_arrow_right Article , Journal 2021Publisher:Institute of Electrical and Electronics Engineers (IEEE) Sahar Jafari; Utkarshaa Varshney; Bram Hoex; Sylke Meyer; Dominik Lausch;Hydrogen has been long known for its ability to passivate defects in silicon devices. However, multiple recent studies on understanding the mechanism behind light- and elevated temperature-induced degradation (LeTID) have proposed that hydrogen plays an important role in this degradation mechanism. Despite its important role in photovoltaic applications, the quantitative assessment of hydrogen is difficult and seldom reported. In this work, we applied hydrogen effusion mass spectroscopy to quantify the hydrogen released from hydrogenated silicon nitride (SiNx:H) and atomic layer deposited (ALD) aluminum oxide (AlOx) dielectric films at elevated temperatures. We demonstrate that the amount of hydrogen effused from these layers strongly correlates with the extent of LeTID observed in the multicrystalline silicon wafers passivated with these monolayers and their stacks. It is shown that the hydrogen effusion scales linearly with the SiNx:H thickness, similar as the extent of LeTID. The effusion measurements on the AlOx/SiNx:H stack revealed that the presence of the AlOx film modifies the total amount of hydrogen that is effused, whereas it was found to slow the hydrogen in-diffusion. This result is consistent with the LeTID extent determined after contact firing where ALD AlOx layers were found to act as a hydrogen diffusion barrier, strongly reducing LeTID when placed in between c-Si and SiNx:H and increasing LeTID when placed on top of SiNx:H.
IEEE Journal of Phot... arrow_drop_down IEEE Journal of PhotovoltaicsArticle . 2021 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2021.3104194&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eu9 citations 9 popularity Top 10% influence Average impulse Top 10% Powered by BIP!
more_vert IEEE Journal of Phot... arrow_drop_down IEEE Journal of PhotovoltaicsArticle . 2021 . Peer-reviewedLicense: IEEE CopyrightData sources: Crossrefadd ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1109/jphotov.2021.3104194&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eu