• Energy Research

The impact of using thin GaAs(Sb)(N) capping layers (CLs) on InAs/GaAs quantum dots (QDs) is investigated for their application in solar cell devices. We demonstrate the ability to combine strain-balancing techniques with band engineering approaches through the application of such CLs. Extended photo-response is attainable by means of an independent tunability of the electron and hole confinements in the QD. Moreover, the CL acts itself as a quantum well (QW), providing an additional photoresponse, so that the devices work as hybrid QD-QW solar cells. The use of a GaAsSb CL is particularly beneficial, providing devices with efficiencies under AM1.5 conditions 20% higher than standard GaAs-capped QDs. This is mainly due to a significant increase in photocurrent beyond the GaAs bandgap, leading to an enhanced short-circuit current density (J(sc)). The addition of N to the CLs, however, produces a strong reduction in J(sc). This is found to be related to carrier collection problems, namely, hindered electron extraction and retrapping in the CLs. Nevertheless, the application of reverse biases induces a release of the trapped carriers assisted by a sequential tunneling mechanism. In the case of GaAsN CLs, this leads to a complete carrier collection and reveals an even higher QD-QW-related photocurrent than when using a GaAsSb CL. The hindered carrier collection is stronger in the case of the quaternary CLs, likely due to the faster recombination rates in the type-I GaAsSbN/GaAs QW structure as compared to the type-II ternary counterparts. Nevertheless, alternative approaches, such as the use of a thinner CL or a short-period superlattice CL, lead to significant improvements, demonstrating a great potential for the quaternary CLs under a proper device design.

A standardized method for measuring thermophotovoltaic (TPV) efficiency has not been yet established, which makes the reported results difficult to compare. Besides, most of the TPV efficiencies reported to date have been obtained using small view factors, i.e., large cell-to-emitter distances, so the impact of the series resistance is usually underestimated, and the optical cavity effects, i.e., the multiple reflections taking place between the emitter and the cell, are not accounted for experimentally. In this work, we present an experimental setup able to measure the TPV efficiency under high view factors (up to 0.98), by using small emitter-to-cell distances (< 1 mm). This allows a more accurate direct measurement of the TPV efficiency at higher power densities than previous works. As a result, a TPV efficiency of 26.4+-0.1 % and a power density of 4.3+-0.8 W/cm2 have been obtained for an InGaAs TPV cell with a back surface reflector irradiated by a graphite thermal emitter at 1592 C.

Thermophotovoltaic (TPV) devices produce the direct conversion of radiant heat into electricity using infrared sensitive photovoltaic (PV) cells. Despite its relatively mature stage of development a standardized method for the measurement of the TPV conversion efficiency hasn’t been established yet, which represents a serious issue for the TPV research development. In this work we present results on a novel method to directly measure the conversion efficiency of a TPV device. This method relies on the direct measurement of the electrical power and the heat dissipated by the TPV cell in the steady state. In this article, we present preliminary results on the efficiency of a TPV device illuminated by a halogen lamp at different incident irradiances and vacuum conditions.

Energy conversion in solar cells incorporating ZnTeO base layers is presented. The ZnTeO base layers incorporate intermediate electronic states located approximately 0.4eV below the conduction band edge as a result of the substitution of O in Te sites in the ZnTe lattice. Cells with ZnTeO base layers demonstrate optical response at energies lower than the ZnTe bandedge, a feature that is absent in reference cells with ZnTe base layers. Quantum efficiency is significantly improved with the incorporation of ZnSe emitter/window layers and transition from growth on GaAs substrates to GaSb substrates with a near lattice match to ZnTe.

The use of thin GaAsSb capping layers (CLs) is demonstrated to provide InAs/GaAs quantum dot (QD) solar cells (SCs) with improved efficiencies up to 20%. The application of such CLs allows the tunability of the QD ground state, switching the QD-CL band alignment to type II for high Sb contents and extending the photoresponse up to 1.5 μm. Moreover, the CL provides a significant contribution to the photocurrent. An improved carrier collection efficiency is also found to be a main reason behind the increase of the short-circuit current density, unveiling a negative impact of the wetting layer (WL) on carrier transport in standard InAs/GaAs QD SCs. Calculations from an 8×8 k·p method suggest the attribution of such an improvement to longer carrier lifetimes in the WL-CL structure due to the transition to a type-II band alignment in Sb-containing structures. A faster open-circuit voltage recovery under light concentration is demonstrated for high Sb content type-II QD-CL structures, leading, in turn, to faster efficiency improvements with light power. 32nd European Photovoltaic Solar Energy Conference and Exhibition; 32-35

Intermediate band materials incorporate a collection of energy levels with special optoelectronic properties within the semiconductor bandgap. This feature broadens the energy range of the solar spectrum useful for photovoltaic conversion and has the potential for enabling both high-current and high-voltage photovoltaic cells. Here we present our preliminary results on a novel intermediate band solar cell based on creating an intermediate band through the incorporation of a large concentration of Ti atoms in a GaAs crystal. The characterization of the material verifies a high concentration of incorporated Ti and the absence of structural defects. The cells show below-bandgap photon absorption with a likely contribution from As antisites and Ga vacancies. The initially degraded open-circuit voltage of the cells exhibits a high voltage recovery from 0.1 V (at room temperature and one-sun irradiance conditions) to 1.4 V (at low temperature and concentrated light).

ZnTe doped with high concentrations of oxygen has been proposed in previous works as an intermediate band (IB) material for photovoltaic applications. The existence of extra optical transitions related to the presence of an IB has already been demonstrated in this material and it has been possible to measure the absorption coefficient of the transitions from the valence band (VB) to the IB. In this study, we present the first measurement of the absorption coefficient associated with transitions from the IB to the conduction band (CB) in ZnTeO. The samples used are 4-mum-thick ZnTe layers with or without O in a concentration ~10 19 cm -3, which have been grown on semiinsulating GaAs substrates by molecular beam epitaxy (MBE). The IB-CB absorption coefficient peaks for photon energies ~0.4 eV. It is extracted from reflectance and transmittance spectra measured using Fourier transform infrared (FTIR) spectroscopy. Under typical FTIR measurement conditions (low light intensity, broadband spectrum), the absorption coefficient in IB-to-CB transitions reaches 700 cm -1. This is much weaker than the one observed for VB-IB absorption. This result is consistent with the fact that the IB is expected to be nearly empty of electrons under equilibrium conditions in ZnTe(O).