• Energy Research

AbstractThis work demonstrates the possibility for low-temperature Liquid-Phase Epitaxy (LPE) growth of lattice matched to GaAs substrate dilute nitride InGaAsN layers with good crystalline quality and high Hall electron mobility. X-ray microanalysis and X-ray diffraction methods have been used to determine the composition and crystalline quality of the grown InGaAsN layers. Surface roughness is examined by atomic force microscopy. N-related local vibration modes are observed by Raman scattering. The Hall electron mobility and free carrier concentration have been measured in the temperature range 80-300K by conventional Van der Pauw method.

AbstractThis work demonstrates the possibility for low-temperature Liquid-Phase Epitaxy (LPE) growth of lattice matched to GaAs substrate dilute nitride InGaAsN layers with good crystalline quality and high Hall electron mobility. X-ray microanalysis and X-ray diffraction methods have been used to determine the composition and crystalline quality of the grown InGaAsN layers. Surface roughness is examined by atomic force microscopy. N-related local vibration modes are observed by Raman scattering. The Hall electron mobility and free carrier concentration have been measured in the temperature range 80-300K by conventional Van der Pauw method.

AbstractThis work reports the results from the synthesis of nanostructured ZnO thin films via electrochemical deposition on glass substrates coated with F doped SnO2. The influence of the deposition parameters on the properties of the obtained ZnO films was studied. The Raman spectra of the ZnO films contain the typical for ZnO vibrational bands. The scanning electron microscope micrographs demonstrate that the films consist of ZnO nanowires. Growing of ZnO in the conditions with addition of H2O2 in lower concentration and without flowing air results in larger grain formation. The ZnO layers demonstrate high diffuse reflection.

AbstractThis work reports the results from the synthesis of nanostructured ZnO thin films via electrochemical deposition on glass substrates coated with F doped SnO2. The influence of the deposition parameters on the properties of the obtained ZnO films was studied. The Raman spectra of the ZnO films contain the typical for ZnO vibrational bands. The scanning electron microscope micrographs demonstrate that the films consist of ZnO nanowires. Growing of ZnO in the conditions with addition of H2O2 in lower concentration and without flowing air results in larger grain formation. The ZnO layers demonstrate high diffuse reflection.

Structural, optical and electrical properties of V doped ZnO thin films deposited by r.f. magnetron co-sputtering on glass substrates at different temperature, Ts, between 150°C and 500°C are studied. The EDS analyses indicate that the average vanadium content in the films is in the range of 0.86–0.89 at. %. XRD spectra demonstrate preferential (002) crystallographic orientation with c-axis perpendicular to the substrate surface and grains sizes of the films about 21–29 nm. The band gap energy, Eg, values are in the range of 3.44–3.47 eV. The deposited V doped ZnO films have low resistivity − (2–8). 10−3 Ω cm. Raman spectra show vibrational phonons modes typical for ZnO. Comparison with the structural, optical and electrical properties of thin films ZnO and ZnO:Al is given.

Structural, optical and electrical properties of V doped ZnO thin films deposited by r.f. magnetron co-sputtering on glass substrates at different temperature, Ts, between 150°C and 500°C are studied. The EDS analyses indicate that the average vanadium content in the films is in the range of 0.86–0.89 at. %. XRD spectra demonstrate preferential (002) crystallographic orientation with c-axis perpendicular to the substrate surface and grains sizes of the films about 21–29 nm. The band gap energy, Eg, values are in the range of 3.44–3.47 eV. The deposited V doped ZnO films have low resistivity − (2–8). 10−3 Ω cm. Raman spectra show vibrational phonons modes typical for ZnO. Comparison with the structural, optical and electrical properties of thin films ZnO and ZnO:Al is given.