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Abstract An alkaline earth boro-aluminosilicate glass (Eagle XG), a soda-lime glass, and a light-weight polyethylene-terephthalate (PET) foil, used as typical substrates for photovoltaics, were treated by an energetic proton beam (3 MeV, dose 106–107 Gy) corresponding to approx. 30 years of operation at low Earth orbit. Properties of the irradiated substrates were characterized by atomic force microscopy, optical absorption, optical diffuse reflectance, Raman spectroscopy, X-ray photoelectron spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, and terahertz (THz) spectroscopy. Minimal changes of optical and morphological properties are detected on the bare Eagle XG glass, whereas the bare PET foil exhibits pronounced increase in optical absorption, generation of photoluminescence, as well as mechanical bending. On the other hand, the identical substrates coated with Indium-tin-oxide (ITO), which is a typical material for transparent electrodes in photovoltaics, exhibit significantly higher resistance to the modifications by protons while ITO structural and electronic properties remain unchanged. The experimental results are discussed considering a potential application of these materials for missions in space.

Hydrogenated microcrystalline silicon (μc-Si:H) is an important material for high-efficiency multijunction solar cells. Due to its complex microstructural properties, it is difficult to describe the electronic behavior clearly. In this study, we measure opto-electronic properties including the mobility gap of μc-Si:H films in solar cells, as well as physical properties such as the crystalline fraction profile. The height distribution function of the ZnO substrates is obtained by AFM scans, which is used for optical simulation. All the parameters that we obtained from measurements were used as input parameters of a model in the ASA simulator. We obtained a good fit between measurements and simulations.

Thin-film epitaxial silicon solar cells are an attractive future alternative for bulk silicon solar cells incorporating many of the process advantages of the latter, but on a potentially cheap substrate. Several challenges have to be tackled before this potential can be successfully exploited on a large scale. This paper describes the points of interest and how IMEC aims to solve them. It presents a new step forward towards our final objective: the development of an industrial cell process based on screen-printing for >15% efficient epitaxial silicon solar cells on a low-cost substrate. Included in the discussion are the substrates onto which the epitaxial deposition is done and how work is progressing in several research institutes and universities on the topic of a high-throughput epitaxial reactor. The industrial screen-printing process sequence developed at IMEC for these epitaxial silicon solar cells is presented, with emphasis on plasma texturing and improvement of the quality of the epitaxial layer. Efficiencies between 12 and 13% are presented for large-area (98cm 2 ) epitaxial layers on highly doped UMG-Si, off-spec and reclaim material. Finally, the need for an internal reflection scheme is explained. A realistically achievable internal reflection at the epi/substrate interface of 70% will result in a calculated increase of 3 mA/cm 2 in short-circuit current. An interfacial stack of porous silicon layers (Bragg reflectors) is chosen as a promising candidate and the challenges facing its incorporation between the epitaxial layer and the substrate are presented. Experimental work on this topic is reported and concentrates on the extraction of the internal reflection at the epi/substrate interface from reflectance measurements. Initial results show an internal reflectance between 30 and 60% with a four-layer porous silicon stack. Resistance measurements for majority carrier flow through these porous silicon stacks are also included and show that no resistance increase is measurable for stacks up to four layers.

A comprehensive experimental and modelling study on the acid-catalysed hydrolysis of the water hyacinth plant (Eichhornia crassipes) to optimise the yield of levulinic acid (LA) is reported (T=150-175 degrees CH2SO4 = 0.1-1M, water hyacinth intake=1-5wt%). At high acid concentrations (>0.5M), LA was the major organic acid whereas at low acid concentrations (<0.1M) and high initial intakes of water hyacinth, the formation of propionic acid instead of LA was favoured. The highest yield of LA was 53mol% (35wt%) based on the amount of C6-sugars in the water hyacinth (T=175 degrees CH2SO4 =1M , water hyacinth intake=1wt%). The LA yield as a function of the process conditions was modelled using a kinetic model originally developed for the acid-catalysed hydrolysis of cellulose and good agreement between the experimental and modelled data was obtained.

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AbstractA series of block copolymers with fixed length of the semiconductor‐block poly(3‐butylthiophene) (P3BT) and varying length of the insulator‐block polystyrene (PS) are synthesized. These copolymers are blended with phenyl‐C61‐butyric acid methyl ester (PCBM) for the bulk heterojunction photoactive layers. With appropriate insulator‐block length and donor–acceptor ratio, the power conversion efficiency increases by one order of magnitude compared with reference devices with pure P3BT/PCBM. PS blocks improve the miscibility of the active layer blends remarkably. The P3BT‐b‐PS crystallizes as nanorods with the P3BT core covered with the PS‐block, which creates a nanoscale tunneling barrier between donor and acceptor leading to more efficient transportation of charge carriers in the semiconductors.

Hole traps have been studied by means of the minority-carrier transient spectroscopy (MCTS) technique in non-intentionally doped n-InSe single crystals grown by the Bridgman-Stockbarger method. Three main trapping levels have been detected at 0.12, 0.22 and 0.45 eV from the top of the valence band with a capture cross section of 3 × 10−16, 8 × 10−17, and 6 × 10−13 cm2, respectively. A comparison is made between the results of this work and data reported by other authors.

A non-fullerene acceptor with a high relative dielectric constant (εr) over 9 is developed. It offers an efficiency of 8.5%, which is the best result for organic solar cells employing high εr materials. Further research should focus on morphology optimization to make high εr practically useful in devices.

In this article, we investigate the passivation quality and electrical contact properties for samples with a 150 nm thick n+ polysilicon layer in comparison to samples with a phosphorus diffused layer. High level of passivation is achieved for the samples with n+ polysilicon layer and an interfacial oxide underneath it. The contact properties with screen-printed fire-through silver paste are excellent (no additional recombination from metallization and specific contact resistivity (ρc) ≤ 2 mΩ·cm2) for the samples with the polysilicon layers. Fast-firing peak temperature was varied during the contact formation process; this was done to see the trend in the contact properties with the change in the thermal budget. The differences in the J0met and ρc for the two different kinds of samples are explained with the help of high-resolution scanning electron microscope imaging. Finally, we prepare M2-sized n-passivated emitter rear totally (PERT) diffused solar cells with a 150 nm thick n+ polysilicon based passivated rear contact. The best cell achieved an efficiency of 21.64%, with a Voc of 686 mV and fill factor of 80.2%. ; Photovoltaic Materials and Devices ; Electrical Sustainable Energy