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Owing to its amorphous structure, a chalcogenide glass exhibits a thermal conductivity k approaching the theoretical minimum of its composition, called the Einstein’s limit. In this work, this limit is beaten in an amorphous solid consisting of glassy particles joined by nanosized contacts. When amorphous particles are sintered below the glass transition temperature under a high pressure, these particles can be mechanically bonded with a minimized interfacial thermal conductance. This reduces the effective k below the Einstein’s limit while providing superior mechanical strength under a high pressure for thermal insulation applications under harsh environments. The lowest room temperature k for the solid counterpart can be as low as 0.10 W/m·K, which is significantly lower than k≈0.2 W/m·K for the bulk glass.

Silicon solar cells featuring carrier selective contacts have been demonstrated to reach ultra-high conversion efficiency. In this work, the electron-selective contact characteristics of ultrathin TiOx films deposited by atomic layer deposition on silicon are investigated via simultaneous consideration of the surface passivation quality and the contact resistivity. Thin TiOx films are demonstrated to provide not only good passivation to silicon surfaces, but also allow a relative low contact resistivity at the TiOx/Si heterojunction. A maximum implied open-circuit voltage (iVoc) of ~703 mV is achieved with the passivation of a 4.5 nm TiOx film, and a relatively low contact resistivity of (~0.25 Ω cm2 is obtained at the TiOx/n-Si heterojunction simultaneously. N-type silicon solar cell with the champion efficiency of 20.5% is achieved by the implementation of a full-area electron-selective TiOx contacts. A simulated efficiency of up to 23.7% is achieved on the n-type solar cell with a full-area TiOx contact. The efficient, low cost electron-transporting/hole-blocking TiOx layer enables the fabrication of high efficiency silicon solar cells with a simplified process flow.

Abstract This paper presents a comparison of commercially used German and Russian reactor pressure vessel steels from the positron annihilation spectroscopy (PAS) point of view, having in mind knowledge obtained also from other techniques from the last decades. The second generations of Russian RPV steels seems to be fully comparable with German steels and their quality enables prolongation of NPP operating lifetime over projected 40 years. The embrittlement of CrMoV steel is very low due to the dynamic recovery of radiation-induced defects at reactor operating temperatures.

Abstract In this work, we propose an acoustic energy harvesting metamaterial consisting of an array of silicone rubber pillars and a PZT patch deposited on an ultrathin aluminum plate with several holes based on locally resonant mechanism. The resonance is formed by removing four pillars, drilling a few of holes and attaching the PZT patch on the aluminum plate. The strain energy originating from an incident acoustic wave is centralized in the resonant region, and the PZT patch is used to convert the elastic strain energy into electrical power. Numerical analysis and experimental results show that the proposed millimeter-scale harvester with holes obviously improves the effect of acoustic energy harvesting while performing at the subwavelength scale for sonic low-frequency environment (less than 1150 Hz). In addition, the experimental results demonstrate that the maximum output voltage and power of the proposed acoustic energy harvesting system with 16 holes of 2 mm radius are 3 and 10 times higher than those without holes at the resonant mode for 2 Pa of incident acoustic pressure. Both the number and size of holes have a significant effect on the performance of acoustic energy harvesting. The advantages of the proposed structure are easy-to-machine and full of practicality, and it can be used in broad applications for low-frequency acoustic energy harvesting.

The point contacting by localized dielectric breakdown (PLDB) method utilizes a dielectric breakdown above a locally doped region to form ohmic contacts for a solar cell rear surface. This article describes the design and fabrication of the PLDB solar cells and the contact properties characterization. A complete solar cell fabrication process applying PLDB as a rear contact design was developed, with the demonstration of an 18.0% proof-of-concept PERC structure PLDB solar cell. Two major loss mechanisms in the fabricated solar cell were characterized to be a high series resistance and nonideal recombination. By modulating the local boron doping profile with acidic etching, the impact of the surface doping concentration on local contact recombination and contact resistivity was investigated, resulting in an estimated contact resistivity of approximately 5 mΩ·cm2 and contact recombination of approximately 600 fA/cm2. With these metrics, modeling suggests that by optimizing the contact pitch of our solar cells, efficiencies of up to 24% are well achievable for this low-temperature contacting method.

Efficient design of wave energy converters requires an accurate understanding of expected loads and responses during the deployment lifetime of a device. A study has been conducted to better understand best-practices for prediction of design responses in a wave energy converter. A case-study was performed in which a simplified wave energy converter was analyzed to predict several important device design responses. The application and performance of a full long-term analysis, in which numerical simulations were used to predict the device response for a large number of distinct sea states, was studied. Environmental characterization and selection of sea states for this analysis at the intended deployment site were performed using principle-components analysis. The full long-term analysis applied here was shown to be stable when implemented with a relatively low number of sea states and convergent with an increasing number of sea states. As the number of sea states utilized in the analysis was increased, predicted response levels did not change appreciably. However, uncertainty in the response levels was reduced as more sea states were utilized.

Acoustic resonances in combustion systems like central heating boilers prohibit further technological advances in these systems. The design and construction is obstructed by acoustic problems because they are largely misunderstood, in spite of our increase in knowledge over the last decades. The flame often acts as an active element in the acoustic field, because the flame transfer function of acoustic waves has a large amplitude at low frequencies. Current models of the phase of the flame transfer function of Bunsen-type flames, based on kinematic behavior of the flame dynamics, completely miss the experimentally observed phase, unless the measured flow field is used in the model. In the current paper we analyze numerical results of the flame dynamics, flow field and flame transfer function found with a 2D detailed numerical model of the flow and structure of the flame on a multiple-slit burner. The model is validated with experiments of the flame dynamics (using chemiluminescence), flow dynamics (using PIV) and flame transfer function (using OH luminescence for the heat release fluctuations and heated wire probe for the acoustic distortions) on exactly the same configuration. A very good agreement is found which indicates the importance of predicting all the influences of the flow on the flame and vise-versa.

Abstract As promising candidates for thermophotovoltaic energy conversion systems, epitaxial thin film III–V cells have gained increasing attention due to their potential for reduced weight. However, few studies have been done to date to enhance the performance of epitaxial single crystal GaSb thin film cells. In this work, the internal quantum efficiencies of epitaxial single crystal GaSb thin film cells with Zn-diffused and epitaxial p–n junctions were predicted with models verified using the corresponding experimental results. The results are the first to indicate that, for the former, when the base region thickness is approximately equal to minority carrier diffusion length, the maximal IQE can be obtained and it is notably higher than the IQE of GaSb bulk cell at wavelengths from 800 to 1700 nm. Reducing bottom surface recombination velocity and increasing hole Shockley–Read–Hall lifetime could also increase the IQE. While for the latter, the results demonstrated that the optimal base region thickness is also approximately equal to minority diffusion length, and reducing emitter region thickness will increase the IQE when the base region is optimized. The comparison of the two optimized GaSb thin film cells showed that the GaSb thin film cell with epitaxial p–n junction has a higher IQE.