ALL2GaN will be the backbone for the European Power Electronics Industry by offering an EU-born smart GaN Integration Toolbox. The project will provide the base for applications with significantly increased material- and energy efficiency, thus meeting the global energy needs while keeping the CO2 footprint to the minimum. 46 partners from 12 European countries will collaborate on 8 major objectives along the entire vertical value chain of power and RF electronics. O1: Push the limits of industrial GaN devices and system-on-chip approaches for ≤ 100V O2: Leverage the full potential of innovative substrates for GaN O3: Achieve novel benchmark solutions for lateral GaN devices and integrated circuits ≥ 650V O4: Reach best technical and cost performance of RF GaN on Si with novel integration concepts O5: Break the packaging limits by application driven integrated solutions of high performance GaN products O6: Advance the methods to evaluate and optimize reliability and robustness of GaN components, modules, and systems for shortest time-to-market and maximum product availability at the end user O7: Demonstrate highest affordable performance for greener power electronics and RF applications O8: Road-mapping for the future GaN technology development and applications to support long-term exploitation/business cases and European leadership beyond ALL2GaN. The collaboration in ALL2GaN is based on a work package structure covering activities on novel power- and RF-GaN technologies for various voltage classes, latest packaging technologies, research on reliability and demonstration in 11 Use Cases. With ambitious goals and a clear vision, ALL2GaN will unleash the energy saving and material efficiency potential of GaN semiconductors for a broad field of applications, thus being in line with the major challenges outlined in the ECS-SRIA. ALL2GaN technology will directly contribute to energy saving and cutting-edge green technology innovation as…Every Watt counts!

Intelligent Reliability 4.0 (iRel40) has the ultimate goal of improving reliability for electronic components and systems by reducing failure rates along the entire value chain. Trend for system integration, especially for heterogeneous integration, is miniaturization. Thus, reliability becomes an increasing challenge on device and system level and faces exceptional requirements for future complex applications. Applications require customer acceptance and satisfaction at acceptable cost. Reliability must be guaranteed when using systems in new and critical environments. In iRel40, 79 partners from 14 countries collaborate in 6 technical work packages along the value chain. WP1 focuses on specifications and requirements. WP2 and WP3 focus on modelling, simulation, materials and interfaces based on test vehicles. WP4 applies the test vehicle knowledge to industrial pilots related to production. WP5 applies the knowledge to testing. WP6 focuses on application use cases applying the industrial pilots. We assess and validate the iRel40 results. Reliable electronic components and systems are developed faster and new processes are transferred to production with higher speed. Crucial insight gained by Physics of Failure and AI methods will push overall quality levels and reliability. iRel40 results will strengthen production along the value chain and support sustainable success of Electronic Components and Systems investment in Europe. By collaboration between academy, industry and knowledge institutes on this challenging topic of reliability, the project secures more than 25.000 jobs in the 25 participating production and testing sites in Europe. The project supports new applications and reliable chips push applications in energy efficiency, e-mobility, autonomous driving and IoT. This unique project brings, for the first time ever, world-leading reliability experts and European manufacturing expertise together to generate a sustainable pan-European reliability community.

R2POWER300 is committed to challenge the following Objectives: • Development and manufacturing of a multi-KET Pilot Line (i.e. Nanoelectronics, Nanotechnology, Advanced Manufacturing) • Energy Efficiency and CO2 Reduction megatrends. The project aims to achieve the following Goals: 1. Set the stage for the future extension to 300mm of the R2 Fab facility located in Agrate Brianza (Italy) - i.e. line’s specification, tools’ evaluation and screening, new process’s optimization and characterization, etc. 2. To evaluate, characterize and optimize the equipments and process necessary to achieve the new BCD10 technology, featuring 90nm lithography, at 300mm wafer size. BCD (i.e. Bipolar + CMOS + DMOS) is a unique smart power technology invented by ST in the mid ‘80s (CMOS’s gate length was 4 m at that time!). As of today BCD is one of the key technology assets of ST and the indefatigable evolution and challenging roadmap makes ST a world-class leader on smart power ICs. 3. Advanced System in Packages: some SiP activity will be performed, with specific reference to Sintering based die-attach, thermal analysis and dedicated packaging solution for high density ALD capacitors.

The main objective of UltimateGaN is to safeguard Europe’s leading position in terms of power semiconductors and high performance RF applications by driving an innovative breakthrough change with the next generation of GaN-technologies. Several predecessor projects are the basis for the availability of the first generation of European based GaN-devices, also revealing that the challenges of these technologies have been heavily underestimated. This makes the high potential of GaN clearly evident to overcome the persisting threats of higher electric fields, current densities and power densities related to the necessity of device shrinkage. The new concept of following a vertical approach to address research through the entire supply chain of technology, packaging, reliability and application will enable a significant improvement of efficiency that goes beyond the limits of silicon based semiconductors in combination with packages that fully utilize the shrink-path of power GaN devices and which are not ready as of today. UltimateGaN’s unique approach addresses, among others, the following innovative applications with the scope to enable digitalisation and energy efficiency for 5G, Smart Grids and Smart Mobility that goes hand in hand with a significant reduction of the CO2 footprint: •Extremely efficient server power supply enabling lower energy consumption in data centres •Benchmark Photovoltaic inverters in terms of efficiency and size to foster the use of renewable energies •Affordable 5G-Amplifiers up to mm-wave enabling a faster 5G rollout •GaN powered LIDAR application to enable autonomous driving •Highest efficiency µ-Grid-converters and On-Board Chargers The global state-of-the-art first generation GaN devices are mainly based on US and Asian suppliers. Only a cooperative project like UltimateGaN with European market leaders and world-class researchers can take on the challenges and bring Europe at the forefront in terms of GaN enabled opportunities.

The European “Green Deal” initiative by the EU commission strives for sustainable mobility and efficient use of resources. Within HiEFFICIENT the project partners will work towards these goals and will develop the next generation of wide band-gap semiconductors (WBG) in the area of smart mobility. To boost this development and the market introduction in automotive applications, HiEFFICIENT partners have set ambitious goals to gain higher acceptance and achieve the maximum benefit in using WBG semiconductors: 1.) Reduction in Volume of 40%, by means of integration on all levels (component-, subsystem- and system level), 2.) Increase efficiency beyond 98%, while reducing losses of up to 50%, 3.) Increase reliability of wide band-gap power electronic system to ensure a lifetime improvement of up to 20%. To accomplish the targeted goals, the partners will work on industrial use cases to demonstrate the key achievements and the progress that goes beyond state of the art. This includes, amongst others, modular inverters with different voltage levels (such as 48V, 400V, 800V), flexible on- and multi-use off-board chargers for different voltage levels, multi-purpose DC/DC converters and test systems for power electronics’ lifetime testing. These use cases are led by OEMs and other industrial partners, who define requirements and specifications for the envisioned systems. The project work starts at component-level, developing highly integrated GaN and SiC devices, and is followed by multi-objective design optimization and virtual prototyping approaches. High integration means big challenges in thermal management, which will be addressed by the development of advanced cooling concepts and modularity for the sake of maintainability and flexibility for future applications. Finally, the demonstrators are integrated in relevant environments to proof the concepts and the applicability for electric drivetrains with higher integration, higher efficiency, and higher reliability.