The OXIGEN project aims to develop a new crystalline silicon (c-Si) photovoltaic (PV) cell generation, and to obtain = 23% efficiency on large area devices. The studies will focus on the fabrication of ultra-thin junctions and functionalized oxides to reach transparent and passivated contacts using industrial processes. Two technologies will be highlighted in this project, the first one being Plasma Immersion Ion Implantation (PIII) which is ideal to obtain ultra-thin junctions. The second one, based on fast Atomic Layer Deposition (ALD), is developed by the French company Encapsulix and will be used for the fabrication of innovative electrodes allowing both surface passivation and charge carrier collection. This collaboration in the field of functionalized oxides for c-Si PV cells will be great to share high level scientific knowledge and research tools. The project will be coordinated by CEA-LITEN (LHMJ) because most of the process integration will be done at INES facilities. The scientific expertise of four academic labs (INL, LMGP, IMEP LAHC, GEEPS-IPVF) on the thin films/interface/device fabrication, simulation and characterizations will be necessary for all technological improvements of OXYGEN cells structures. All technological and scientific improvements will be done in collaboration with a start-up (ENCAPSULIX), which will offer specific skills in industrial process development.

The European FDSOI family of technology platforms is recognized for its low power consumption, versatility, high radiation hardness, embedded non-volatile memories and exceptional radio frequency capabilities. The objective of the SOIL project is to extend FDSOI technology platforms and broaden their use within the European industry in order to provide Europe with a real alternative to semiconductor supply autonomy using FDSOI semiconductors. We will thus expand a European technology manufactured by European players and suited to the European and Worldwide market. The SOIL project will give Europe the opportunity to move forward with industrial and academic players spanning the value chain by joining in the risk-taking necessary for the growth dynamics of semiconductors for Automotive, Space, IOT and Edge AI domain in Europe. The SOIL project will accelerate the implementation of semiconductor manufacturing based on FDSOI technology, building, and securing the European semiconductor value chain from material to system, supporting the twin green and digital transition. SOIL will expand the family of European FDSOI technology platforms by developing production and innovation capabilities in the following key areas: i) Advanced features: prepare next generation of FDSOI technologies and components; ii) Semiconductor Intellectual Property (SIP) core: reinforce the FDSOI design ecosystem and the supply chain around FDSOI manufacturing; iii) Digital, analog & RF single-chip integration capabilities (Microcontroller Unit; RF communication; RF sensor, e.g. radar). The project will shape the future by developing new technology approaches as well as numerous IPs on advanced applications and will promote the capability and benefits of the technology by providing advanced demonstrations on key applications and comparing the technology. SOIL will strengthen and expand the overall FDSOI ecosystem from material to system.