Discrete GaN power electronic devices have penetrated the consumer market and first products have amply demonstrated a disruptive improvement of the performance and reduction of the form factor. With demonstrated robustness for heavy ion radiation and neutron radiation, p-GaN enhancement mode HEMTs allow disruptive innovative designs for space applications. However, to unlock the full potential of the technology for point of load convertors, three important limitations need to be solved, as addressed in this project, i.e. 1) the reduction of the inductive parasitics through monolithic integration of drivers and power devices (GaN-IC) 2) optimization of the inductive passive components together with the active devices 3) a strong interaction between point of load convertor design and GaN-IC design. Electrical performance and radiation robustness will be evaluated and assessed for space applications in the upcoming frame of satellites massive digitalization. The project with duration of 36 months, comprises of two learning cycles in definition and refinement of the application requirements, design and manufacturing of the GaN-ICs and passive devices, and development of the point of load convertor boards, first with focus on the basic building blocks and initial prototypes, followed by further optimization towards the target requirements. The consortium has been joined by Thales Alenia Space (France and Belgium) and Würth Elektronik as space and terrestrial point of load convertor manufacturers. IMEC contributes with its state-of-art GaN-IC platform technology and Würth Elektronik with the design and prototype manufacturing of the passives. MinDCet designs the optimized GaN-ICs and contributes with a state-of-art controller. This project contributes to EU non-dependence of GaN technology as discrete GaN transistors are, so far, mostly produced by Asian and/or North American manufacturers and pushes the state-of-the-art with higher level of integration (GaN-IC).

The 21st century has been dominated by an ambient digitalization, a trend that is mirrored by the use of catchwords such as Smart Energy, Smart Homes & Smart Cities and the increasing use of electronics in everyday objects. Current IoT scenarios expect a number of around 75 billion connected devices by 2025, and the powering of these devices by batteries will result in a considerable amount of potentially hazardous waste. The spread of electronic systems in remote locations should thus be accompanied by a change in power generation, making use of dislocated and disordered energy sources. A cost-efficient and environmentally friendly realization of energy harvesting (EH), however, is still a challenge, as the required input of functional material and electronic components in comparison to the energy output is high and often involves lead-based materials, manufacturing methods that consume high amounts of energy and costly assembly steps. SYMPHONY aims for the development of new materials for low-cost and scalable printing and structuring processes to fabricate multimodal EH solutions based on the ferroelectric polymer P(VDF-TrFE) as well as printed energy storage devices and rectifiers not using rare elements and heavy metals. The hybrid integration of these devices on flexible films with low power harvesting ICs will result in a specific cost below 1€/mW (well below the value for piezoceramic and electrodynamic EH). The reduction of hazardous waste and energy consumption in SYMPHONY starts with material selection and manufacturing, but ultimately unfolds its full potential in the most CO2-relevant application areas: renewable energy generation, room heating/cooling and mobility. The innovative EH concept of SYMPHONY used to power distributed sensor nodes will reduce emissions by 50% increasing the efficiency of wind turbines (Smart Energy), making room heating/cooling 20% more efficient (Smart Home) and supporting the transformation of urban mobility (Smart City).

WInSiC4AP core objective is to contribute in developing reliable technology bricks for efficient and cost-effective applications addressing social challenges and market segments where Europe is a recognized global leader as well as automotive, avionics, railway and defence. WInSiC4AP approach is to rely on the strength of vertical integration allowing optimization, technologies fitting application requirements, developing the full ecosystem and approach relevant issues as reliability in the full scope. That enhances the competitiveness of EU- Industries as well as TIER1 and TIER2 down to the value chain in a market context where other countries today, such as the USA or Japan, are advancing and new players accessing SiC enter in the market. New topologies and architecture will be developed for targeted application simulating operational environment, at laboratory level, driving the needed and still missed technologies, components and demonstrators to fill the gap between current state of the art and the very high demanding specifications. WInSiC4AP framework has been built so that companies working in different domains (i.e. automotive car maker and TIER1-2 and avionics, railway and defence TIER1-TIER2) and in the vertical value chain (semiconductor suppliers, companies manufacturing inductors and capacitors) as well as academic entities and laboratories will collaborate to co-design solutions, solve problems and exchange know-how, such that unforeseen results may also emerge. WInSiC4AP will be supported with synergy between ECSEL JU and ESI funding enabling complementary activities with relevant economic and social impact envisage in a less development region of Union.

GaN4AP project has the ambitious target of making the GaN-based electronics to become the main power active device present in all power converter systems, with the possibility of developing a close-to-zero energy loss power electronic systems. GaN4AP project will… 1. Develop innovative Power Electronic Systems for power conversion and management with advanced architecture and circuit topology based on state of the art GaN-based High Electron Mobility Transistors (HEMTs) available in a new concept high-frequency packages that can achieve the requested 99% power conversion efficiency. 2. Develop an innovative material (Aluminium Scandium Nitride, AlScN) that combined with advanced growth and process solutions can provide outstanding physical properties for highly efficient power transistors. Therefore, a new HEMT device architecture will be fabricated with much higher current (2x) and power density (2x) than existing transistors. 3. Develop a new generation of vertical power GaN-based devices on MOSFET architecture with vertical p-GaN inversion channel for safe power switching up to 1200 V. We will cover all the production chain from the device design, processing and characterization up to tests in low inductance half bridge power modules and their implementation in high speed power switching systems. 4. Develop a new intelligent and integrated GaN solutions (STi2GaN) both in System in Package (SiP) and Monolithic variances, that will allow the generation of E-Mobility power converters. The projects will focus on scalable concept for 48V-12V bidirectional Buck Boost converters for conventional and ADAS applications combining, in a novel wire-bond free package, a state of the art BCD driver & controller along with a common substrate Monolithic 100V e-GaN Half Bridge. The development of new device technologies and innovative power circuits, employing the GaN-based devices is a crucial factor for the world-wide competitiveness of EU industries.