The key objective of PowerBase “Enhanced substrates and GaN pilot lines enabling compact power applications” is to ensure the availability of Electronic Components and Systems (ECS) for key markets and for addressing societal challenges, aiming at keeping Europe at the forefront of the technology development, bridging the gap between research and exploitation, creating economic and employment growth in the European Union. The project PowerBase aims to contribute to the industrial ambition of value creation in Europe and fully supports this vision by addressing key topics of ECSEL multi annual strategic plan 2014. By positioning PowerBase as innovation action a clear focus on exploitation of the expected result is primary goal. To expand the limits in current power semiconductor technologies the project focuses on setting up a qualified wide band gap GaN technology Pilot line, on expanding the limits of today’s silicon based substrate materials for power semiconductors, improving manufacturing efficiency by innovative automation, setting up of a GaN compatible chip embedding pilot line and demonstrating innovation potential in leading compact power application domains. PowerBase is a project proposal with a vertical supply chain involved with contributions from partners in 7 European countries. This spans expertise from raw material research, process innovation, pilot line, assembly innovation and pilot line up to various application domains representing enhanced smart systems. The supporting partners consist of market leaders in their domain, having excellent technological background, which are fully committed to achieve the very challenging project goals. The project PowerBase aims to have significant impact on mart regions. High tech jobs in the area of semiconductor technologies and micro/nano electronics in general are expressed core competences of the regions Austria: Carinthia, Styria, Germany: Sachsen, Bavaria and many other countries/ regions involved.

GaN4AP project has the ambitious target of making the GaN-based electronics to become the main power active device present in all power converter systems, with the possibility of developing a close-to-zero energy loss power electronic systems. GaN4AP project will… 1. Develop innovative Power Electronic Systems for power conversion and management with advanced architecture and circuit topology based on state of the art GaN-based High Electron Mobility Transistors (HEMTs) available in a new concept high-frequency packages that can achieve the requested 99% power conversion efficiency. 2. Develop an innovative material (Aluminium Scandium Nitride, AlScN) that combined with advanced growth and process solutions can provide outstanding physical properties for highly efficient power transistors. Therefore, a new HEMT device architecture will be fabricated with much higher current (2x) and power density (2x) than existing transistors. 3. Develop a new generation of vertical power GaN-based devices on MOSFET architecture with vertical p-GaN inversion channel for safe power switching up to 1200 V. We will cover all the production chain from the device design, processing and characterization up to tests in low inductance half bridge power modules and their implementation in high speed power switching systems. 4. Develop a new intelligent and integrated GaN solutions (STi2GaN) both in System in Package (SiP) and Monolithic variances, that will allow the generation of E-Mobility power converters. The projects will focus on scalable concept for 48V-12V bidirectional Buck Boost converters for conventional and ADAS applications combining, in a novel wire-bond free package, a state of the art BCD driver & controller along with a common substrate Monolithic 100V e-GaN Half Bridge. The development of new device technologies and innovative power circuits, employing the GaN-based devices is a crucial factor for the world-wide competitiveness of EU industries.

Electronic devices evolved significantly, fuelling the digital transformation towards a connected society. To growing need for performance, speed and efficiency pushes wireless applications to operate at sub-THz frequencies and beyond. Today’s technologies, however, come short to efficiently and effectively utilize these frequencies, even taking into account technological evolutions. A disruptive yet commercially viable technology is urgently needed. Indium Phosphide (InP) has outstanding and unique capabilities to surpass other technologies in terms of high-frequency performance. Today, InP is only adopted in niche markets because of its costly and scarce substrates. Move2THz will transform the InP platform and build a fully integrated European value chain providing commercially attractive, ecology-friendly, mass-market technologies suitable for sub-THz frequency operation and beyond, enabling emerging applications like mobile/data connectivity, imaging and sensing. To achieve this, Move2THz will radically innovate the manufacturing process by establishing a breakthrough InP-on-silicon (InPoSi) global standard. This facilitates to upscale the wafer size & volume compatible with CMOS manufacturing capacities, while minimizing the use of rare InP resources and ecological footprint. Further up the value chain, the European InP platform will be developed, matured and adopted through substrates, manufacturing, design and foundry services, including integration, packaging and education. Through Move2THz, the technical excellence provided by our consortium and the technologies developed in this project will significantly strengthen the competitive and sovereign position of Europe. It will secure its supply of semiconductors in a sustainable way for the next generations of wireless applications, generate a wealth of new market opportunities, and make significant contributions to a highly qualified European workforce. To achieve this, InP’s adoptability must accelerate NOW.