The objective of the 10Ce pThe objective of the 10Ce project is to explore and realize solutions for the 10 CMOS chip technology. Its consortium covers the entire value chain for manufacturing of the CMOS chips in the 10A node, that is, from chip design to lithography to process technology and finally chip metrology. Essential parts of hardware, software and processing technology are developed pushing the boundaries of semiconductor design and manufacture to enable the new node and keep Moores law alive. The 10Ce project is built based on the following four pillars. Lithography Equipment: ASML and expert EUV partners Zeiss, FastMicro, IOM, Plasma Matters, TNO, TU/e, University of Twente and VDL-ETG will: Increase key performance indicators of the EUV tool, to enable smaller pitches and increase yield. Increase sustainability of the EUV tool, both during production as well as increasing the times a module in an EUV tool can be refurbished. Chip design and mask optimization: Imec with the involvement of expert imaging , CAD and IP design partners ARM, ASML and Siemens will: Assess the impact of the introduction of 3D mCFET on chip design: in terms of power, performance and area. Development of new computational lithography solutions to print 10 CFET structures, to improve imaging by next generation mask design. Process Technology: As the ultimate device for logic, the CFET architecture is proposed and Imec and expert partners Coventor, EVG, IBS, Intel, JSR, LAM, RECIF, TEL, Zeiss and Wooptix will: Demonstrate a fully functional monolithic CFET (mCFET) Increase sustainability of the chip manufacturing process, across the manufacturing process and including resist material development. Process characterization: Applied Materials and expert partners Thermofisher, Nova, KLA and Bruker will: Explore and realize high throughput and sample density per wafer, for the analysis, characterization for 10 3D CFET devices, interconnect and materials

The SeNaTe project is the next in a chain of thematically connected ENIAC JU KET pilot line projects which are associated with 450mm/300mm development for the 12nm and 10nm technology nodes. The main objective is the demonstration of the 7nm IC technology integration in line with the industry needs and the ITRS roadmap on real devices in the Advanced Patterning Center at imec using innovative device architecture and comprising demonstration of a lithographic platform for EUV and immersion technology, advanced process and holistic metrology platforms, new materials and mask infrastructure. A lithography scanner will be developed based on EUV technology to achieve the 7nm module patterning specification. Metrology platforms need to be qualified for N7’s 1D, 2D and 3D geometries with the appropriate precision and accuracy. For the 7nm technology modules a large number of new materials will need to be introduced. The introduction of these new materials brings challenges for all involved processes and the related equipment set. Next to new deposition processes also the interaction of the involved materials with subsequent etch, clean and planarization steps will be studied. Major European stakeholders in EUV mask development will collaboratively work together on a number of key remaining EUV mask issues. The first two years of the project will be dedicated to find the best options for patterning, device performance, and integration. In the last year a full N7 integration with electrical measurements will be performed to enable the validation of the 7nm process options for a High Volume Manufacturing. The SeNaTe project relates to the ECSEL work program topic Process technologies – More Moore. It addresses and targets as set out in the MASP at the discovery of new Semiconductor Process, Equipment and Materials solutions for advanced CMOS processes that enable the nano-structuring of electronic devices with 7nm resolution in high-volume manufacturing and fast prototyping.