FastLane targets a full, highly competitive and sustainable European value chain for Silicon Carbide (SiC) based power electronics. The goal is to provide a competitive technology excellence from engineered SiC substrates to novel devices, smart power modules and converters to broadened automotive and industrial applications. The next generation of SiC materials will be developed by improved quality of the crystalline starting material, material re-use and acceleration of substrate EU-based manufacturing. Based on the new materials the next generation SiC MOSFET power devices will be developed overcoming current limitations regarding efficiency, performance, robustness and sustainability and will integrate also new on-chip sensing technology. Power modules based on the devices will be further improved by several innovations, e.g. advanced sintering which will lead to improved power module reliability and therefore better sustainability. On component level, highly efficient and reliable inverters for automotive and industrial applications will be developed, including a variety of innovations in detail. In all steps, an improvement of SiC material characterization methodologies will increase the quality and the output of EU based semiconductors. Overall, performance and reliability are expected to increase greatly in all steps. These developments will lead to an overall reduction of cost and, by reduction of the footprint (lifetime increase, CO2 decrease, water consumption decrease), to a greener economy. With the envisioned goals, FastLane will decrease the environmental footprint all along the product lifecycle and contribute to the European Green Deal and ensure a sustainable European sovereignty in power electronics. Cost benefits for the end user will be achieved by the reuse of the automotive economy of scale. With these steps, FastLane contributes to the European societal goals and a greener economy.

The global shift to electrification and energy efficiency is driving the soaring demand for Silicon Carbide (SiC), a critical material for industries such as electric vehicles (EVs), renewable energy, and industrial automation. In EVs, SiC can boost driving range, cut cooling costs, and lower battery costs, while in renewable energy, it reduces power losses and system costs. However, SiC wafers cost 30-50x more than silicon, and SiC wafer production capacity is limited due to complex manufacturing and low yields, all hindering SiC adoption. The European semiconductor sector’s reliance on external suppliers for SiC materials leaves it vulnerable to supply chain disruptions, price fluctuations, and geopolitical risks. Without a domestic, stable SiC supply chain, Europe risks losing its competitive edge in critical industries and having its industry champions move their operations overseas. Tackling these challenges is critical to safeguarding Europe’s technological sovereignty and industrial competitiveness. To address these challenges, Zadient is pioneering two groundbreaking solutions: (i) an ultra-pure SiC source material production and (ii) a high-yield crystal growth technology, both of which will improve performance and drive down final costs. Zadient’s SiC source material offers a unique 99.999999% purity, reducing defect densities and increasing crystal growth yields, directly lowering wafer costs and enabling higher chip yields. By ensuring higher-quality wafers, Zadient provides a critical cost advantage for European SiC device producers, helping them compete in the global market. Zadient’s high-yield crystal growth process eliminates major crystal defect types that limit wafer yields. It achieves superior crystal quality and operates at much higher growth rates, drastically improving cost efficiency. Moreover, Zadient’s technology will become the first to enable commercial-scale production of 300-mm SiC wafers, redefining the global SiC industry.