The scientific interest for h-BN material is growing every year due to its potential use in various domains such as microelectronic. The presented project aims to develop and study a new atomic layer deposition (ALD) approach for boron nitride very thin films. Indeed, the few existing ALD processes being mostly based on ammonia and/or halide precursors, new ALD approach using alternative precursors is proposed to avoid corrosive and/or irritant reactant and by-product as well as to improve the film quality especially in term of crystallinity. Regarding an eventual industrial application, low energy consumption and environmentally friendly process is sought after. The polymer derived ceramics route will thus be transposed to ALD. No process combining these two synthetic routes has been reported up to now. Elaboration of well crystallized h-BN ultra-thin films is motivated among others by further study of BN/graphene heterostructures, which are highly promising in microelectronics.