Magnetic Random Access Memory (MRAM) is now available on the market, with applications such as in FPGA, or as stand-alone cache memories. The concept of Perpendicular-Shape-Anisotropy (PSA) MRAM has been made to enhance the market of MRAM, in which the usual ultrathin spintronic storage layer is replaced with a vertical magnetic pillar, allowing to sustain retention at <10nm size and elevated temperature. Now that its read-write proof of concept has been made, M-bed-RAM’s objective is to address the fundamental bottlenecks preventing its technological uptake, related to dense fabrication and low-current writability. We propose three concepts to globally solve this: dense fabrication by embedding the element in vias; use graded-anisotropy pillars to ease writability; implement synthetic antiferromagnet core-shell elements, addressing both writability and density by a shielding effect. Practical work consists of simulation to optimize the design; optimization or development of atomic layer deposition 3d spintronic material and stacks for 3D conformality; synthesis and magnetic qualification of stand-along storage layer pillars; the proof-of-concept or read/write operation. The consortium brings complementary expertise: nanowire and MRAM, micromagnetic simulation, clean-room technology, advanced magnetic microscopy and electric testing (SPINTEC), electroplating of magnetic materials to fill the vias (NEEL), thin-film ALD spintronic materials for conformal deposition and produce core-shell structures (IJL). Success of the project should open new markets for MRAM, fueling the European chip act with innovative capacities. More broadly, this will provide knowledge and technology suitable to implement other spintronic concepts in a 3D architecture in the future, e.g., for logic or artificial intelligence purposes.