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Absorption and luminescence of hydrogen and oxygen passivated silicon quantum dots

Name: Absorption and luminescence of hydrogen and oxygen passivated silicon quantum dots
Keywords: photovoltaics, UV-VIS absorption, IV semiconductor, photoluminescence, nanoparticles

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2011 Ukraine English Publisher:Видавництво СумДУ

Authors: Rajesh, C.; Mahamuni, S.; Ghaisas, S.V.;

Absorption and luminescence of hydrogen and oxygen passivated silicon quantum dots

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Abstract

Silicon (Si) quantum dots (QDs) passivated with oxygen and hydrogen of size 1 nm in diameter are prepared by wet chemical route and electrochemical route respectively. The optical measurements reveal the strong absorption feature around 4.7 eV and weak absorption at 3.4 eV for oxygen passivated Si QDs. Hydrogen passivated Si QDs of the same size show absorption at 4.9 eV. Both the oxygen and hydrogen passivated Si QDs show broad luminescence around 3.9 and 3.8 eV. Films of these QDs, when coated on crystalline silicon solar cells, show an increase in the efficiency of the solar cell by 12 %. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27881

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Ukraine

Related Organizations

Sumy State University
Ukraine
Sumy State University
Ukraine

Keywords

photovoltaics, UV-VIS absorption, IV semiconductor, photoluminescence, nanoparticles

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