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High quality narrow gap (~1.52eV) a-Si:H with improved stability fabricated by excited inert gas treatment

descriptionPublicationkeyboard_double_arrow_right Article English Journal:High quality narrow gap (~1.52eV) a-Si:H with improved stability fabricated by excited inert gas treatment, volume 66, page 321 (issn: 0927-0248,

High quality narrow gap (~1.52eV) a-Si:H with improved stability fabricated by excited inert gas treatment

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identifier:oai:t2r2.star.titech.ac.jp:00027878

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Fields of Science (3) View all

engineering and technology

electrical engineering, electronic engineering, information engineering

Fields of Science

engineering and technology

electrical engineering, electronic engineering, information engineering

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