The need for non-contact techniques to improve the characterization of electronic defects in materials and components is critical for the assessment of new photovoltaic technologies. Advanced characterization tools are required to study such defects and quantify their density within the material. The Modulated Photoluminescence (MPL) technique that can operate in a wide frequency range [10Hz-200MHz] has proven to be a promising candidate, showing its utility in characterizing defects in semiconductor materials. A previous study revealed singularities in the phase dependence of MPL as a function of frequency, called V-shapes, where the phase is not monotonously varying with frequency, but exhibits a local extremum. On this basis, in our study, we carried out a theoretical analysis by solving the continuity equations, as described in a previous article. This suggests that the existence of a V-shape may be related to the presence of minority carrier traps within the material, but this relationship is not always clear and requires additional explanation. In studying the variation of the V-shape with temperature, we extended previous theoretical work by identifying rules for the appearance and disappearance of the V-shape in the MPL bode diagrams of probed materials in the presence of Shockley-Read-Hall (SRH) recombination centers. From modelling of such materials in low injection, by varying the energy level position of the defect and the capture cross-section of minority and majority carriers, we show that the V-shape curves appear when the defect is a minority carrier trap. In this case, we propose a method to extract the information of the defect properties. However, for other conditions like higher injection and intrinsic material,V-shapes can appear even if the defect is a majority carrier trap. These results will be illustrated using modelling and experimental works.