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Interface Engineering of electron Transport Layer‐Free Planar Perovskite Solar Cells with Efficiency Exceeding 15 %

descriptionPublicationkeyboard_double_arrow_right Article , Journal 14 Aug 2017Publisher:WileyJournal:Energy Technology, volume 5, pages 1,844-1,851 (issn: 2194-4288, eissn: 2194-4296,

Authors: Feiyue Huang; Lin Gu; Shao Jin; Qiyao Guo; Hui Xu; Jihuai Wu; Yunfang Huang; +3 Authors

doi: 10.1002/ente.201700437

Interface Engineering of electron Transport Layer‐Free Planar Perovskite Solar Cells with Efficiency Exceeding 15 %

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Abstract

AbstractA high‐performance electron transport layer (ETL)‐free planar fluorine‐doped tin oxide (FTO)/perovskite/hole‐transport material/Au solar cell was prepared. We revealed that a plasma‐cleaning pretreatment for FTO substrates could significantly improve the quality of perovskite films, leading to the promotion of charge separation, an increase in the electron‐transport rate, and a decrease in the recombination reaction at the FTO/perovskite interface. Finally, the efficiency of the cells was greatly improved. A power conversion efficiency of over 15 % and a fill factor of 0.68 were achieved under AM 1.5G 100 mW cm−2 irradiation without the use of a compact n‐type metal‐oxide blocking layer.

Related Organizations

Huaqiao University
China (People's Republic of)
Huaqiao University
China (People's Republic of)

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