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Laser processing of Al2O3/a‐SiCx:H stacks: a feasible solution for the rear surface of high‐efficiency p‐type c‐Si solar cells

descriptionPublicationkeyboard_double_arrow_right Article , Journal 26 Apr 2012 Spain Publisher:WileyJournal:Progress in Photovoltaics: Research and Applications, volume 21, pages 1,171-1,175 (issn: 1062-7995, eissn: 1099-159X,

Authors: Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Colina, Monica; Orpella García, Alberto; López, Gema; Alcubilla González, Ramón;

doi: 10.1002/pip.2207

handle: 2117/16135

Laser processing of Al2O3/a‐SiCx:H stacks: a feasible solution for the rear surface of high‐efficiency p‐type c‐Si solar cells

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Abstract

AbstractWe explore the potential of laser processing aluminium oxide (Al2O3)/amorphous silicon carbide (a‐SiCx:H) stacks to be used at the rear surface of p‐type crystalline silicon (c‐Si) solar cells. For this stack, excellent quality surface passivation is measured with effective surface recombination velocities as low as 2 cm/s. By means of an infrared laser, the dielectric film is locally opened. Simultaneously, part of the aluminium in the Al2O3 film is introduced into the c‐Si, creating p+ regions that allow ohmic contacts with low‐surface recombination velocities. At optimum pitch, high‐efficiency solar cells are achievable for substrates of 0.5–2.5 Ω cm. Copyright © 2012 John Wiley & Sons, Ltd.

Country

Spain

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Keywords

Solar cells, Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars, :Energies::Energia solar fotovoltaica::Cèl·lules solars [Àrees temàtiques de la UPC], 530, Solar cells., Cèl·lules solars

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