AbstractResearch into the formation of InAs quantum dots (QDs) in GaAs using the metalorganic vapor phase epitaxy technique is presented. This technique is deemed to be cheaper than the more often used and studied molecular beam epitaxy. The best conditions for obtaining a high photoluminescence response, indicating a good material quality, have been found among a wide range of possibilities. Solar cells with an excellent quantum efficiency have been obtained, with a sub‐bandgap photo‐response of 0.07 mA/cm2 per QD layer, the highest achieved so far with the InAs/GaAs system, proving the potential of this technology to be able to increase the efficiency of lattice‐matched multi‐junction solar cells and contributing to a better understanding of QD technology toward the achievement of practical intermediate‐band solar cells. Copyright © 2016 John Wiley & Sons, Ltd.