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The Zn(S,O,OH)/ZnMgO buffer in thin‐film Cu(In,Ga)(Se,S)2‐based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in‐line co‐evaporated Cu(In,Ga)Se2 solar cells

descriptionPublicationkeyboard_double_arrow_right Article , Journal 28 Apr 2009Publisher:WileyJournal:Progress in Photovoltaics: Research and Applications, volume 17, pages 479-488 (issn: 1062-7995, eissn: 1099-159X,

Authors: Dimitrios Hariskos; B. Fuchs; Cédric Hubert; Michael Powalla; Richard Menner; Negar Naghavi; Daniel Lincot;

doi: 10.1002/pip.897

The Zn(S,O,OH)/ZnMgO buffer in thin‐film Cu(In,Ga)(Se,S)2‐based solar cells part II: Magnetron sputtering of the ZnMgO buffer layer for in‐line co‐evaporated Cu(In,Ga)Se2 solar cells

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Abstract

AbstractA ZnS/Zn1‐xMgxO buffer combination was developed to replace the CdS/i‐ZnO layers in in‐line co‐evaporated Cu(In,Ga)Se2(CIGS)‐based solar cells. The ZnS was deposited by the chemical bath deposition (CBD) technique and the Zn1‐xMgxO layer by RF magnetron sputtering from ceramic targets. The [Mg]/([Mg] + [Zn]) ratio in the target was varied between x = 0·0 and 0·4. The composition, the crystal structure, and the optical properties of the resulting layers were analyzed. Small laboratory cells and 10 × 10 cm2 modules were realized with high reproducibility and enhanced stability. The transmission is improved in the wavelength region between 330 and 550 nm for the ZnS/Zn1‐xMgxO layers. Therefore, a large gain in the short‐circuit current density up to 12% was obtained, which resulted in higher conversion efficiencies up to 9% relative as compared to cells with the CdS/i‐ZnO buffer system. Peak efficiencies of 18% with small laboratory cells and 15·2% with 10 × 10 cm2 mini‐modules were demonstrated. Copyright © 2009 John Wiley & Sons, Ltd.

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Centre national de la recherche scientifique
France

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