AbstractIron-acceptor (FeAc) pair association has been studied in compensated n-type silicon. A dynamic approach, based on the charge carrier recombination rates over the Fei trap level, leads to an explanation of the observed FeAc pairing reaction in compensated n-type silicon and extends the understanding of FeAc pairing kinetics. Association kinetics was used to measure a height dependent acceptor concentration profile. Even in compensated n-type silicon good agreement with expected concentrations is found.