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Iron-acceptor Pair Kinetics in Compensated n-type Silicon

descriptionPublicationkeyboard_double_arrow_right Article , Journal 01 Jan 2014Publisher:Elsevier BVJournal:Energy Procedia, volume 55, pages 564-569 (issn: 1876-6102, Copyright policy )
Authors: Fritz Kirscht; Fabien Gibaja; Christian Möller; Kevin Lauer; Til Bartel;

doi: 10.1016/j.egypro.2014.08.026

Iron-acceptor Pair Kinetics in Compensated n-type Silicon

Abstract

AbstractIron-acceptor (FeAc) pair association has been studied in compensated n-type silicon. A dynamic approach, based on the charge carrier recombination rates over the Fei trap level, leads to an explanation of the observed FeAc pairing reaction in compensated n-type silicon and extends the understanding of FeAc pairing kinetics. Association kinetics was used to measure a height dependent acceptor concentration profile. Even in compensated n-type silicon good agreement with expected concentrations is found.

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Keywords

Energy(all), compensated n-type silicon, lifetime measurement, doping concentration determination, FeAc pair

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citations
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
Average
Average
Average
gold
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