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Distribution and generation of traps in SiO2/Al2O3 gate stacks

handle: 20.500.14243/158498 , 10447/176716
In this work we combine charge-pumping measurements with positive constant voltage stress to investigate trap generation in SiO2/ Al2O3 n-MOSFET. Trap density has been scanned either in energy or in position based on charge-pumping (CP) measurements performed under different operating conditions in terms of amplitude and frequency of the gate pulse. Our results have revealed that the traps are meanly localized shallow in energy level, deeper in spatial position and they are mostly generated near the Si/SiO2 interface. (C) 2007 Elsevier Ltd. All rights reserved.
- University of Palermo Italy
- Intel (United States) United States
- Katholieke Universiteit Leuven Belgium
- Intel (United States) United States
- National Research Council Italy
interface traps, charge pumping (CP), energy distribution, Control and Systems Engineering; Electrical and Electronic Engineering, high-k dielectrics, Bulk traps
interface traps, charge pumping (CP), energy distribution, Control and Systems Engineering; Electrical and Electronic Engineering, high-k dielectrics, Bulk traps
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