Lead iodide (PbI2) is a 2D layered semiconductor used in several electronic applications, such as solar cells, X-ray, and gamma-ray detectors. Most of its properties have been reported for monocrystals or polycrystalline thick films used in high-energy photon detectors. As for thin films used in other optoelectronic devices, the reported properties are limited to the conditions adopted in manufacturing the devices. Furthermore, very little is known about the properties of films deposited by sputtering. Here, we investigate the optical and structural properties of PbI2 thin films deposited by rf-sputtering a PbI2 target. The deposition temperature significantly influences the film's properties, as determined by X-ray, scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-vis, and Raman spectroscopy. A common characteristic at all temperatures was forming metallic lead (Pb) segregated in the surface of films, with concentration depending on the deposition temperature. These lead clusters were successfully converted into PbI2 using an iodination process, allowing the synthesis of pure PbI2 films without lead segregation. The activation energy for the reaction between Pb clusters and iodine vapor was determined by adopting the Arrhenius equation. It was also observed that converting PbI2 film into perovskite through the two-step process, by immersion of the PbI2 film into methylammonium iodide solution, transforms the segregated lead into perovskite. The sputtering technique allows the deposition of uniform films over large areas compatible with roll-to-roll processes, which are desired to produce large-area detectors and perovskite solar cells.