Abstract Thin film solar cells with ITO/ZnO/P3HT:PCM:CTSe NCs/Ag structure were fabricated employing a fast and cost-effective procedure using blended solution of P3HT:PCBM:CTSe NCs deposited by spin casting, followed by thermal annealing steps. The CTSe NCs are prepared via solvothermal method. An inverted architecture of device with structure ITO/ZnO/P3HT: PCBM:CTSe NCs/Ag have been fabricated with different concentration of CTSe NCs in poly(3-hexyle thiophene) (P3HT): [6,6]phenyl-C61-butyric-acid-methyl-ester (PCBM) matrix. The effect of CTSe NCs on the performance of hybrid solar cell with optimized blend ratio of P3HT:PCBM and CTSe NCs has been investigated for optimum power conversion. The charge carrier extraction and recombination at the interface of donor-acceptor material were studied using Electrochemical impedance spectroscopy (EIS) under dark condition. EIS study has demonstrated that the charge transfer rate was higher for the device having optimized wt% of CTSe NCs (10 wt%) in P3HT:PCBM active layer. A significant improvement in the device performances was observed on incorporation of CTSe NCs. The device exhibited open circuit voltage (Voc) of 0.475 V, short circuit current density (Jsc) of 6.95 mA/cm2, fill factor (FF) of 0.41 and power conversion efficiency (PCE) of 1.35%.