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Investigation of the damage as induced by 1.7MeV protons in an amorphous/crystalline silicon heterojunction solar cell

descriptionPublicationkeyboard_double_arrow_right Article , Journal 01 Jul 2004 Italy Publisher:Elsevier BVJournal:Solar Energy Materials and Solar Cells, volume 83, pages 435-446 (issn: 0927-0248,

Authors: NEITZERT, Heinrich Christoph; SPINILLO P.; BELLONE, Salvatore; LICCIARDO, GIAN DOMENICO; TUCCI M.; ROCA F.; GIALANELLA L.; +1 Authors

doi: 10.1016/j.solmat.2004.01.035

handle: 11588/109977 , 11386/1002524 , 11591/192270

Investigation of the damage as induced by 1.7MeV protons in an amorphous/crystalline silicon heterojunction solar cell

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Abstract

Abstract Current–voltage under illumination and quantum yield characteristics of an amorphous silicon/crystalline silicon hetero solar cell have been measured before and after exposure to high-energy (1.7 MeV) protons. A comparison of the measured wavelength-dependent quantum yield with calculated values enabled to determine the effective electron diffusion length of the crystalline silicon, that dropped from a value of 434 μm before to a value of 4 μm after irradiation with 5×10 12 cm −2 protons. Good agreement has been obtained between measured and simulated data using DIFFIN, 1 a finite-element simulation program for a-Si:H/c-Si heterojunction solar cells, enabling us to extract the depth profile of the recombination rate and the density of states distribution in the semiconductor layers before and after irradiation.

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Italy

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Keywords

heterojunction; amorphous silicon; crystalline silicon; radiation damage; solar cell

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