High performance inverted bulk heterojunction solar cells by incorporation of dense, thin ZnO layers made using atmospheric atomic layer deposition
Copyright policy )High performance inverted bulk heterojunction solar cells by incorporation of dense, thin ZnO layers made using atmospheric atomic layer deposition
AbstractA thin ZnO (<200nm) film grown by Atmospheric Atomic Layer Deposition (AALD) in a matter of minutes was studied as a hole-blocking layer in poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C61-buyric acid methyl ester (P3HT:PCBM) based inverted solar cells. These AALD ZnO layers were compact, had a high electron mobility of 3.4+0.1cm2/Vs, had up to 100% transmittance to visible light, and a good wettability for the blend. Despite the very rapid, open atmosphere growth method, the cell performance was comparable with some of the best inverted bulk heterojunction P3HT:PCBM cells in the literature. The performance was also maintained after 200 days of storage in air in the dark.
- University of Cambridge United Kingdom
- THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE United Kingdom
- Department of Physics The University of Cambridge United Kingdom
- Department of Physics The University of Cambridge United Kingdom
- THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE United Kingdom
Spatial or atmospheric atomic layer deposition, Renewable Energy, Sustainability and the Environment, Hole blocking layer, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Nanoscale, Organic photovoltaics
Spatial or atmospheric atomic layer deposition, Renewable Energy, Sustainability and the Environment, Hole blocking layer, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Nanoscale, Organic photovoltaics
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