Silicon carbide/silicon rich carbide multilayers, aimed at the formation of silicon nanodots for photovoltaic applications, have been studied. The electrical properties have been investigated at the nano-scale by conductive Atomic Force Microscopy (c-AFM) and at macro-scale by temperature dependent conductivity measurements. The mixture is composed of highly conductive Si nanoclusters and moderately conductive SiC nanoclusters in a disordered matrix. The conduction mechanism takes place via band states induced by the disorder at the interface between nanodot clusters. Structural properties have been extracted by optical spectroscopy analyses. The results contribute to the understanding of the microscopical electronic mechanisms of the composite material, which is a candidate for third generation photovoltaics.