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Direct comparison of atomic layer deposition and sputtering of In2O3:H used as transparent conductive oxide layer in CuIn1−xGaxSe2 thin film solar cells

descriptionPublicationkeyboard_double_arrow_right Article , Journal 01 Dec 2016Publisher:Elsevier BVJournal:Solar Energy Materials and Solar Cells, volume 157, pages 757-764 (issn: 0927-0248,

Authors: Tomas Kubart; Jan Keller; Lars Stolt; Fredrik Gustavsson; Asim Aijaz; Marika Edoff; Tobias Törndahl;

doi: 10.1016/j.solmat.2016.07.012

Direct comparison of atomic layer deposition and sputtering of In2O3:H used as transparent conductive oxide layer in CuIn1−xGaxSe2 thin film solar cells

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Abstract

In this study thin films of hydrogenated In2O3 (IOH) were fabricated by physical vapor deposition (PVD) with and without a post-annealing step, and by atomic layer deposition (ALD). The electro-opt ...

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