Abstract In this article, we look, from the carrier perspective, at the effect of the double grading in a CIGS absorber, in order to understand its benefit compared to a single grading. We focus on the double grading effects on the conduction band edge, generation rate and carrier collection. We first show that, when the minimum bandgap position (notch position) is outside of the absorber depletion region, a local maximum of the conduction band edge appears at the back of the depletion region, creating a hump, which hinders the collection of electrons. Interpreting the effect of the grading as an effective electric field, we show that the hump is caused by the competition between the absorber internal electric field and the grading created effective electric field. From this, we deduce that the notch should be positioned in the depletion region. As expected, the generation rate increases significantly at the notch position. However, studying carrier collection and the recombination rate, we show that, even if in the ideal case we should observe a total collection of carriers generated in the depletion region, the recombination rate in the SCR increases significantly when the notch is in it. We propose that this is caused by the increased carrier generation close to recombination centres. The ideal notch position is, therefore, a compromise between being close enough to the front to have a maximal carrier collection and avoiding the creation of a hump, while minimizing the carrier recombination.