We investigate the performance of monolithic copper indium gallium selenide CIGS perovskite tandem solar cells with two different CIGS bottom device absorbers Cu In,Ga Se2 or Cu In,Ga S,Se 2 and with three different hole transporting layers HTLs NiOx SAM, NiOx Cu SAM and SAM alone. NiOx Cu is 2 wt copper doped nickel oxide and SAM is the MeO 2PACz [2 3,6 dimethoxy 9H carbazol 9 yl ethyl]phosphonic acid self assembled monolayer. The CIGSe is fabricated by physical vapor deposition PVD , has a Eg amp; 8764; 1.06eV, and a amp; 963;RMS,PVD amp; 8764; 65 nm, while the CIGSSe is fabricated by rapid thermal processing RTP , has a Eg amp; 8764; 1.01eV, and a amp; 963;RMS,RTP amp; 8764; 120 nm. While the current certified, 24.2 efficient, world record monolithic CIGSe perovskite tandem solar cell has previously been achieved with SAM as a stand alone HTL, this work investigates whether SAM can yield similarly high efficiencies also on industrially compatible, very rough RTP CIGSSe absorbers. We find that the devices with SAM as stand alone HTL suffer from severe FF and Voc losses and that NiOx Cu is needed to act as a shunt quenching layer below that SAM, ensuring conformal coverage of the rough bottom sub cell surface. Within this work the highest achieved in house measured PCEs for the RTP and PVD CIGS based tandems are 21.6 and 23.2 respectively, on a cell area of 1.08 cm2, both of which are obtained with NiOx Cu SAM as an HTL