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SiOFx and SiO2 deposition in an ECR-HDP reactor: Tool characterisation and film analysis

descriptionPublicationkeyboard_double_arrow_right Article , Conference object , Journal 01 Jan 1997Publisher:Elsevier BVJournal:Microelectronic Engineering, volume 37-38, pages 271-276 (issn: 0167-9317,

Authors: D.J. den Boer; A. J. Kalkman; H. Fukuda; S. Radelaar; J.B.C. van der Hilst; G. C. A. M. Janssen;

doi: 10.1016/s0167-9317(97)00122-6 , 10.1109/mam.1997.621063

SiOFx and SiO2 deposition in an ECR-HDP reactor: Tool characterisation and film analysis

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Abstract

High Density Plasma (HDP) reactors are currently introduced for the deposition of SiO/sub 2/ and SiOF in submicron gaps between aluminium conductors in advanced integrated circuits. The main feature of HDP reactors is the ability to fill high aspect ratio spaces between aluminium conductors. This feature is achieved by employing a simultaneous deposition and sputtering process.

Related Organizations

ASM International
United States
Delft University of Technology
Netherlands
ASM International
United States

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