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Extracting contact recombination from FFT-filtered photoluminescence imaging of half-metallised silicon solar cells

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2025Embargo end date: 27 Feb 2025 United Kingdom Publisher:Royal Society of Chemistry (RSC)Journal:EES Solar, volume 1, pages 89-98 (eissn: 3033-4063,

Copyright policy )Funded by:UKRI | Gettering of impurities i..., UKRI | Charged oxide inversion l..., UKRI | Charged oxide inversion l...

Authors: Shi, Y; Payne, DNR; Fell, A; Leon, C; Niewelt, T; Khorani, E; Wilshaw, PR; +3 Authors

doi: 10.1039/d4el00016a , 10.24406/publica-4329

Extracting contact recombination from FFT-filtered photoluminescence imaging of half-metallised silicon solar cells

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Abstract

Recombination at the metal-silicon interface is a major barrier to reaching the theoretical power conversion efficiency limits. We present a PL method for evaluating the metal contact recombination current (J0,c) of rear TOPCon metallisation.

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United Kingdom

Related Organizations

University of Oxford
United Kingdom
Fraunhofer Society
Germany
Macquarie University
Australia
Fraunhofer Institute for Solar Energy Systems
Germany
University of Warwick
United Kingdom

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Funded by

UKRI| Gettering of impurities in silicon: delivering quantitative understanding to improve photovoltaics, UKRI| Charged oxide inversion layer (COIL) solar cells, UKRI| Charged oxide inversion layer (COIL) solar cells

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Energy Research