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Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type , Conference object 01 Jan 2020 France, France Publisher:EDP SciencesJournal:EPJ Photovoltaics, volume 11, page 4 (eissn: 2105-0716, Copyright policy )
Authors: Cyril Léon; Cyril Léon; Pere Roca i Cabarrocas; Marie-Estelle Gueunier-Farret; Marie-Estelle Gueunier-Farret; Sylvain Le Gall; Sylvain Le Gall; +2 Authors

doi: 10.1051/epjpv/2020002

Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates

Abstract

Epitaxial silicon layers were grown on highly doped c-Si substrates using the plasma-enhanced chemical vapour deposition process (PECVD) at low temperature (175 °C). The transport and defect-related properties of these epi-Si layers were characterized by current density-voltage (J–V) and capacitance–voltage (C–V) techniques. The results show that the epi-Si layers exhibit a non-intentional n-type doping with a low apparent doping density of about 2 × 1015 cm−3. The admittance spectroscopy technique is used to investigate the presence of deep-level defects in the structure. An energy level at 0.2 eV below the conduction band has been found with a density in the range of 1015 cm−3 which may explain the observed apparent doping profile.

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[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, TJ807-830, impurity profile, [SPI.MAT] Engineering Sciences [physics]/Materials, 530, Renewable energy sources, [SPI.MAT]Engineering Sciences [physics]/Materials, current–voltage, Capacitance–voltage, epitaxial Si, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 500, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], epitaxial si, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NRJ] Engineering Sciences [physics]/Electric power, capacitance–voltage

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citations
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
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