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A dip coating process for large area silicon-doped high performance hematite photoanodes

doi: 10.1063/1.4812831
A facile and low-cost dip-coating process for the deposition of silicon doped hematite films (Si:α-Fe2O3) for hydrogen production by solar water splitting in photo-electrochemical cells (PEC) is presented. The precursors include iron nitrate, oleic acid, tetraethyl orthosilicate (TEOS) and tetrahydrofuran as dispersion agent. Sequential dip coating on transparent conducting oxides glass substrates with heat treatment steps at 500 °C and 760 °C yields mesoporous Si:α-Fe2O3 with a roughness factor of 17 and photocurrent densities >1 mA/cm2 at 1.23 V vs. reversible hydrogen electrode with SiOx underlayer and surface modification. A PEC demonstrator with 80 cm2 active area in 1 M potassium hydroxide yields a photocurrent of 35 mA at 1.5 AM irradiation with the corresponding hydrogen evolution at a Pt wire counter electrode.
- École Polytechnique Fédérale de Lausanne EPFL Switzerland
- Swiss Federal Laboratories for Materials Science and Technology Switzerland
- University of Basel Switzerland
- TU Bergakademie Freiberg Germany
- Lawrence Berkeley National Laboratory United States
citations This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).24 popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.Top 10% influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).Top 10% impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.Top 10%
