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Conference object . 2016 . Peer-reviewed

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A 100nW 6PPM/°C voltage reference with all MOS transistors

descriptionPublicationkeyboard_double_arrow_right Conference object , Article 01 Sep 2016Publisher:IEEEJournal:2016 International Conference On Communication Problem-Solving (ICCP)

Authors: Qun-Chao Chen; Liang-Hung Wang;

doi: 10.1109/iccps.2016.7751124

A 100nW 6PPM/°C voltage reference with all MOS transistors

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Abstract

The paper presents a low-voltage low-power CMOS subthreshold voltage reference with no resistors and bipolar junction transistors applied in a wide temperature range. A GGNMOS transistor is used to fine-tune of its curvature compensation in high temperature. The temperature coefficient (TC) is lower than 6ppm/0C in a temperature changed from −40°C to 125°C with different corners. The supply voltage ranges from 0.65V to 2.5V, and the power consumption is 100nW with 1V supply voltage. The power supply rejection ratio (PSRR) without any filter capacitor at 100Hz is lower than −46dB.

Related Organizations

Fuzhou University
China (People's Republic of)
Fuzhou University
China (People's Republic of)

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