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Inline Cu(In,Ga)Se$_{2}$ Co-evaporation for High-Efficiency Solar Cells and Modules

descriptionPublicationkeyboard_double_arrow_right Article , Journal 01 Jul 2013 Sweden Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Journal of Photovoltaics, volume 3, pages 1,100-1,105 (issn: 2156-3381, eissn: 2156-3403,

Authors: Lindahl, Johan; Zimmermann, Uwe; Szaniawski, Piotr; Törndahl, Tobias; Hultqvist, Adam; Salomé, Pedro; Platzer-Björkman, Charlotte; +1 Authors

doi: 10.1109/jphotov.2013.2256232

Inline Cu(In,Ga)Se$_{2}$ Co-evaporation for High-Efficiency Solar Cells and Modules

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Abstract

In this paper, co-evaporation of Cu(In,Ga)Se2 (CIGS) in an inline single-stage process is used to fabricate solar cell devices with up to 18.6% conversion efficiency using a CdS buffer layer and 18.2% using a Zn1-xSnxOy Cd-free buffer layer. Furthermore, a 15.6-cm2 mini-module, with 16.8% conversion efficiency, has been made with the same layer structure as the CdS baseline cells, showing that the uniformity is excellent. The cell results have been externally verified. The CIGS process is described in detail, and material characterization methods show that the CIGS layer exhibits a linear grading in the [Ga]/([Ga]+[In]) ratio, with an average [Ga]/([Ga]+[In]) value of 0.45. Standard processes for CdS as well as Cd-free alternative buffer layers are evaluated, and descriptions of the baseline process for the preparation of all other steps in the Angstrom Solar Center standard solar cell are given.

Country

Sweden

Related Organizations

Uppsala University
Sweden

Keywords

Cu(In, Cd-free, Teknik och teknologier, inline co-evaporation, thin-film solar cells, Engineering and Technology, Ga)Se-2 (CIGS), Zn1-xSnxOy, Buffer layer

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