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IEEE Journal of Photovoltaics

Article . 2024 . Peer-reviewed

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Effect of Threading Dislocations on GaInP Front- and Rear-Junction Solar Cells Grown on Si

descriptionPublicationkeyboard_double_arrow_right Article 01 Jul 2024Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Journal of Photovoltaics, volume 14, pages 616-622 (issn: 2156-3381, eissn: 2156-3403,

Authors: Brian Li; Pankul Dhingra; Ryan D. Hool; Shizhao Fan; Minjoo Larry Lee;

doi: 10.1109/jphotov.2024.3385730

Effect of Threading Dislocations on GaInP Front- and Rear-Junction Solar Cells Grown on Si

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Chinese Academy of Sciences
China (People's Republic of)
Suzhou Institute of Nano-tech and Nano-bionics
China (People's Republic of)
University of Illinois at Urbana Champaign
United States
Chinese Academy of Sciences
China (People's Republic of)

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NSF| UNS: Collaborative Research: 30%-Efficient III-V/Silicon Tandem Solar Cells, NSF| Collaborative Research: Low Cost, High Performance Ultrathin GaAs Solar Cells for Terrestrial Photovoltaics

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