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Conference object . 2008 . Peer-reviewed

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Crystal growth and scintillation property of Nd<sup>3+</sup>-doped LaF<inf>3</inf> single crystal

descriptionPublicationkeyboard_double_arrow_right Conference object , Article 01 Oct 2008Publisher:IEEEJournal:2008 IEEE Nuclear Science Symposium Conference Record

Authors: Toshihisa Suyama; Takayuki Yanagida; Martin Nikl; Kentaro Fukuda; Noriaki Kawaguchi; Akira Yoshikawa;

doi: 10.1109/nssmic.2008.4774610

Crystal growth and scintillation property of Nd<sup>3+</sup>-doped LaF<inf>3</inf> single crystal

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Abstract

Two-inch size Nd3+-doped LaF3 single crystals was successfully grown by the Czochralski technique. No remarkable absorption due to unfavorable impurity was observed from optical absorption measurements in the vacuum ultra-violet spectral region. The high crystallinity and homogeneous Nd3+ distribution were found from X-ray rocking curve analysis and chemical composition analysis respectively. X-ray excited luminescence spectrum was measured and the significant 4f25d-4f3 luminescence at 173 nm was obtained from the grown crystal. The pulse height spectrum and scintillation decay curve were taken upon gamma-ray irradiation. As a result, grown crystal showed sufficient response to the gamma-ray and its scintillation decay was determined as fast as 7.6 nsec.

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engineering and technology

electrical engineering, electronic engineering, information engineering

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engineering and technology

electrical engineering, electronic engineering, information engineering

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