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C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy

descriptionPublicationkeyboard_double_arrow_right Conference object , Article 01 Jun 2013 Netherlands Publisher:IEEEJournal:2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

Authors: Bram Hoex; Wilhelmus M. M. Kessels; Michel Bosman; Naomi Nandakumar;

doi: 10.1109/pvsc.2013.6745164

C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy

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Abstract

In this work the mechanism of c-Si surface passivation by Al 2O3 films is studied in detail by means of spatially resolved electron energy loss spectroscopy (EELS). The bonding configuration of Al and O is studied in as-deposited and annealed Al2O3 films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition (ALD). The ratio of tetrahedrally and octahedrally coordinated Al is found to increase after annealing, especially for the plasmaassisted ALD sample. The increase is strongest close to the c-Si/Al2O3 interface and thus these results strongly support tetrahedrally coordinated Al as the origin for the negative fixed charge in Al2O3.

Country

Netherlands

Related Organizations

Eindhoven University of Technology
Netherlands
National University of Singapore
Singapore
Agency for Science, Technology and Research
Singapore
Technical University Eindhoven
Netherlands
Agency for Science, Technology and Research
Singapore

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Keywords

Surface passivation, Aluminum oxide, Industrial and Manufacturing Engineering, Control and Systems Engineering, Fixed charge, Electron energy loss spectroscopy, Electrical and Electronic Engineering

1 Research products, page 1 of 1

Manipulating the negative fixed charge density at the c-Si/Al2O3 interface
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