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Study of Defect Properties in CuGaSe2 Thin-Film Solar-Cells Using Admittance Spectroscopy

descriptionPublicationkeyboard_double_arrow_right Conference object , Other literature type 01 Jun 2017Publisher:IEEEJournal:2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

Authors: Takeaki Sakurai; Hajime Shibata; Katsuhiro Akimoto; Shogo Ishizuka; Muhammad Monirul Islam; Shigeru Niki;

doi: 10.1109/pvsc.2017.8366492

Study of Defect Properties in CuGaSe2 Thin-Film Solar-Cells Using Admittance Spectroscopy

- Summary

Abstract

Defect study of the CuGaSe2 thin-films deposited with three-stage evaporation process under different Se-flux (PSe) conditions were performed using admittance spectroscopy (AS) technique. A dominant defect, A2 has been identified around 230~350 meV above the valance band (Ev) of the CuGaSe2. In general, density of defects was found to decrease with an increase in the PSe condition during deposition of the CuGaSe2 layer. Effect of the Se-flux on the performance of the fabricated solar-cells were discussed in relation to the defect-properties of the corresponding CuGaSe2 absorber-layer identified by admittance spectroscopy.

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