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A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}\hbox{/}\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ p-HEMTs

descriptionPublicationkeyboard_double_arrow_right Article , Journal 01 Jul 2008Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Electron Devices, volume 55, pages 1,577-1,584 (issn: 0018-9383, eissn: 1557-9646,

Authors: Geun Young Yeom; Dae-Hyun Kim; Young-Woon Kim; Tae-Woo Kim; Sang-Duk Park; Jeoun-Oun Bae; Seong June Jo; +5 Authors

doi: 10.1109/ted.2008.923522

A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}\hbox{/}\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ p-HEMTs

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Abstract

We investigated 60-nm In0.52Al0.48As/In0.53Ga0.47As pseudomorphic high-electron mobility transistors (p-HEMTs) fabricated by using a Ne-based atomic-layer-etching (ALET) technology. The ALET process produced a reproducible etch rate of 1.47 Aring/cycle for an InP etch stop layer, an excellent InP etch selectivity of 70 against an In0.52Al0.48As barrier layer, and an rms surface-roughness value of 1.37 Aring for the exposed In0.52Al0.48As barrier after removing the InP etch stop layer. The application of the ALET technology for the gate recess of 60-nm In0.52Al0.48As/In0.53Ga0.47As p-HEMTs produced improved device parameters, including transconductance (GM), cutoff frequencies (fT)> and electron saturation velocity (vsat) in the channel layer, which is mainly due to the high etch selectivity and low plasma-induced damage to the gate area. The 60-nm In0.52Al0.48As/In0.53Ga0.47As p-HEMTs fabricated by using the ALET technology exhibited GM,Max = 1-17 S/mm, fT = 398 GHz, and vsat = 2.5 X 107 cm/s.

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Sungkyul University
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Gwangju Institute of Science and Technology
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Seoul National University
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Sungkyul University
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11 Research products, page 1 of 2

Fabrication of In<inf>0.52</inf>Al<inf>0.48</inf>As/In<inf>0.53</inf>Ga<inf>0.47</inf>As p-HEMT utilizing Ne-based atomic layer etching
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