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Optical Study Of Interface Effects In TCO/Amorphous Semiconductors Systems

descriptionPublicationkeyboard_double_arrow_right Conference object , Other literature type 09 Aug 1988 Italy Publisher:SPIEJournal:SPIE Proceedings, volume 946, page 129 (issn: 0277-786X,

Authors: DEMICHELIS F; KANIADAKIS, Giorgio; TRESSO, Elena Maria; TAGLIAFERRO, Alberto; ARYA R. R.;

doi: 10.1117/12.947421

handle: 11583/1750517

Optical Study Of Interface Effects In TCO/Amorphous Semiconductors Systems

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Abstract

The optical properties of each semiconducting layer in amorphous solar cells were deduced from transmittance and reflectance measurements. Optical gaps, absorbances and photon efficiencies o structures were deduced. The influence on such properties of the different transparent conductive oxides used as windows in solar cells was obtained by comparing the same structures covered by Tin Oxide and Indium Tin Oxide respectively.

Country

Italy

Related Organizations

Polytechnic University of Turin
Italy

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